Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm−1 hydrogen related line

1996 ◽  
Vol 25 (3) ◽  
pp. 331-335 ◽  
Author(s):  
F. X. Zach ◽  
E. E. Haller ◽  
D. Gabbe ◽  
G. Iseler ◽  
G. G. Bryant ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Microscopic Structure ◽  
Related Line

Grain Size Effects of SnO2 Varistor Induced by Doping Pr

2007 ◽  
Vol 280-283 ◽  
pp. 275-278
Author(s):  
Cheng Ju Zhang ◽  
Jin Feng Wang ◽  
Wen Bin Su ◽  
Guo Zhong Zang ◽  
Hong Cun Chen
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Breakdown Voltage ◽  
Size Effects ◽  
Relative Permittivity ◽  
Microscopic Structure ◽  
Grain Size Effects

The effects of Pr on the microstructure and nonlinear electrical properties of the (Co,Ta)-doped SnO2 varistors were investigated. It was found by characterizing the samples sintered at 1350 oC that the breakdown voltage increases significantly from 500v/mm to 1200v/mm, and the relative permittivity decreased rapidly from 2525 to 1199 with increasing Pr6O11 concentration from 0 to 1.20 mol%. The analysis of samples’ microscopic structure showed that the grain size of SnO2 rapidly decreases from 5.1 to 3.7 µm with increasing Pr6O11 concentration from 0 to 1.20mol% .The significant decrease of SnO2 grain size is the main reason for raising breakdown voltage and reducing permittivity.

Effect of Composite Additives on ZnO Varistor Ceramics

2011 ◽  
Vol 687 ◽  
pp. 21-25 ◽  
Author(s):  
Jian Feng Zhu ◽  
Guo Quan Qi ◽  
Hai Bo Yang ◽  
Fen Wang
Keyword(s):  
Electrical Properties ◽  
Ball Milling ◽  
Decomposition Method ◽  
High Energy ◽  
Microscopic Structure ◽  
Linear Coefficient ◽  
Zno Varistor ◽  
Average Grain Size ◽  
Zno Powders ◽  
Energy Ball

ZnO-based varistor ceramics were prepared by sintering ZnO powders with minor additives that were synthesized by standard ball milling, high energy ball milling for 10 h, and pyrogenic decomposition of nitrate. The microscopic structure and composition were analyzed by SEM and XRD respectively, and the electrical properties were investigated by a DC parameter instrument for varistors. Influences of composite additives on composition, microstructure, and electrical properties of ZnO-based varistors were studied. The ZnO varistor with optimum performance is prepared by the pyrogenic decomposition method and it has an average grain size of 5 µm and possesses a varistor voltage of about 561 V/mm, non linear coefficient of 75, and leakage current of 0.45 µA.

scholarly journals EVALUATION OF DIELECTRIC STRENGTH OF EPDM ELASTOMER LOADED WITH ATH FILLER

2020 ◽  
Vol 4 (3) ◽  
pp. 13-18
Author(s):  
Tamer Sheta ◽  
A.Hossam Gad ◽  
L.S. Nasrat ◽  
S.M. El-Debeiky
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Thermal Conditions ◽  
Dielectric Strength ◽  
Microscopic Structure ◽  
Ethylene Propylene Diene Monomer ◽  
Climate Conditions ◽  
Ethylene Propylene ◽  
Alumina Trihydrate ◽  
Composite Samples

Ethylene Propylene Diene Monomer (EPDM) electrical properties are improved by adding Alumina Trihydrate (ATH) filler. Composite of EPDM with ATH filler are prepared with 10%, 20%, 30% and 40% percentages of concentration. The dielectric strength of the composite samples are tested under various thermal conditions such as (25, 70,100 and 130) ᵒC to simulate the various types of climates and clarify the effect of high temperature on the electrical properties of elastomers. Composite samples were exposed also to different climate conditions such as wet and salt. The obtained results of the composite performance are analyzed and discussed in the light of the variations of the material microscopic structure.  

Microscopic structure and electrical properties of heat treated coals and eucalyptus charcoal

Carbon ◽  
1982 ◽  
Vol 20 (3) ◽  
pp. 201-205 ◽  
Author(s):  
J.G. Hernandez ◽  
I. Hernandez-Calderon ◽  
Carlos A. Luengo ◽  
Raphael Tsu
Keyword(s):  
Electrical Properties ◽  
Microscopic Structure ◽  
Heat Treated

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

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