Annealing effects on the electrical properties and microscopic structure of semi‐insulating polycrystalline silicon films

Wonju Cho; Yuji Takeuchi; Hiroshi Kuwano

doi:10.1063/1.356578

Annealing effects on the electrical properties and microscopic structure of semi‐insulating polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.356578 ◽

1994 ◽

Vol 75 (12) ◽

pp. 7916-7921 ◽

Cited By ~ 2

Author(s):

Wonju Cho ◽

Yuji Takeuchi ◽

Hiroshi Kuwano

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Microscopic Structure ◽

Annealing Effects ◽

Polycrystalline Silicon Films

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Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

Journal of Materials Science Materials in Electronics ◽

10.1007/bf00180785 ◽

1996 ◽

Vol 7 (6) ◽

Author(s):

Myeon-Koo Kang ◽

Takayuki Matsui ◽

Hiroshi Kuwano

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Polycrystalline Silicon Films ◽

Ion Implanted

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Electrical properties and grain size of phosphorus in situ doped and cw laser annealed polycrystalline silicon films

Vacuum ◽

10.1016/0042-207x(85)90251-9 ◽

1985 ◽

Vol 35 (8) ◽

pp. 341

Keyword(s):

Grain Size ◽

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Cw Laser ◽

Polycrystalline Silicon Films

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Electrical properties of polycrystalline silicon films formed from amorphous silicon films by flash lamp annealing

Current Applied Physics ◽

10.1016/j.cap.2010.10.008 ◽

2011 ◽

Vol 11 (3) ◽

pp. 604-607 ◽

Cited By ~ 6

Author(s):

Takuya Nishikawa ◽

Keisuke Ohdaira ◽

Hideki Matsumura

Keyword(s):

Electrical Properties ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Flash Lamp ◽

Polycrystalline Silicon Films

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ChemInform Abstract: ELECTRICAL PROPERTIES OF THERMALLY AND LASER ANNEALED POLYCRYSTALLINE SILICON FILMS HEAVILY DOPED WITH ARSENIC AND PHOSPHORUS

Chemischer Informationsdienst ◽

10.1002/chin.198250012 ◽

1982 ◽

Vol 13 (50) ◽

Author(s):

S. SOLMI ◽

M. SEVERI ◽

R. ANGELUCCI ◽

L. BALDI ◽

R. BILENCHI

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Electrical properties and grain size of phosphorusinsitudoped and cw laser annealed polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.331341 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5086-5092 ◽

Cited By ~ 2

Author(s):

T. Ternisien d’Ouville ◽

D. P. Vu ◽

A. Perio ◽

A. Baudrant

Keyword(s):

Grain Size ◽

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Cw Laser ◽

Polycrystalline Silicon Films

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Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l857 ◽

1999 ◽

Vol 38 (Part 2, No. 8A) ◽

pp. L857-L860 ◽

Cited By ~ 18

Author(s):

Seiichiro Higashi ◽

Kentaro Ozaki ◽

Keiji Sakamoto ◽

Yoshiaki Kano ◽

Toshiyuki Sameshima

Keyword(s):

Electrical Properties ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Polycrystalline Silicon Films

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Free carrier optical absorption used to analyze the electrical properties of polycrystalline silicon films formed by plasma enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(00)01793-4 ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 248-250 ◽

Cited By ~ 3

Author(s):

T. Watanabe ◽

T. Sameshima ◽

K. Nakahata ◽

T. Kamiya ◽

I. Shimizu

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Optical Absorption ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Free Carrier ◽

Silicon Films ◽

Polycrystalline Silicon Films

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Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.351239 ◽

1992 ◽

Vol 71 (3) ◽

pp. 1462-1468 ◽

Cited By ~ 14

Author(s):

S. Hasegawa ◽

M. Arai ◽

Y. Kurata

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Oriented Polycrystalline ◽

Polycrystalline Silicon Films

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Effects of high temperature rapid thermal annealing using a flat gas flame on the electrical properties of phosphorus‐doped polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.362527 ◽

1996 ◽

Vol 79 (11) ◽

pp. 8498-8502 ◽

Cited By ~ 3

Author(s):

W. F. Qu ◽

Y. Masaki ◽

A. Kitagawa ◽

M. Suzuki

Keyword(s):

High Temperature ◽

Electrical Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Temperature Rapid Thermal Annealing ◽

Gas Flame ◽

Polycrystalline Silicon Films ◽

Phosphorus Doped

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Electrical properties and structure of boron-doped sputter-deposited polycrystalline silicon films

Thin Solid Films ◽

10.1016/0040-6090(79)90506-6 ◽

1979 ◽

Vol 61 (1) ◽

pp. 105-113 ◽

Cited By ~ 5

Author(s):

K. Haberle ◽

E. Fröschle

Keyword(s):

Electrical Properties ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Boron Doped ◽

Sputter Deposited ◽

Polycrystalline Silicon Films

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