On the source of scatter in contact resistance data

1992 ◽  
Vol 21 (9) ◽  
pp. 917-921 ◽  
Author(s):  
S. S. Winterton ◽  
T. J. Smy ◽  
N. G. Tarr
Keyword(s):  
Contact Resistance ◽  
Resistance Data

Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

The Relationship Between Microstructure and Contact Resistance in NiAuGe/ZrB2/Au Ohmic Contacts to GaAs.

1990 ◽  
Vol 181 ◽  
Author(s):  
M. P. Grimshaw ◽  
A. E. Staton-Bevan ◽  
J. Herniman ◽  
D. A. Allan
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Gaas Layer ◽  
Contact System ◽  
Initial Contact ◽  
The Relationship ◽  
Resistance Data

ABSTRACTThe microstructure and contact resistance of NiAuGe contacts to n-type GaAs were determined as a function of initial contact composition. The contact microstructures were found to contain varying amounts of of α, α’ and β (or Au7Ga2) Au-Ga, epitaxial Ge, NiGe and NiGeAs phases. A previously unidentified NiAsx (Zr,B) phase was also observed. The contact resistance was found to vary between 0.22-0.38±0.03Ωmm. Comparison of the microstructural and contact resistance data revealed that the ohmic formation models based on (i) the formation of a recrystallised n+ GaAs layer and (ii) the presence of a graded Ge/GaAs heterojunction were not applicable to this contact system.

The Effect of Lubricant on Electrical Connector’s Sliding Performance

2014 ◽  
Vol 875-877 ◽  
pp. 428-433
Author(s):  
Xiao Lan Ye ◽  
Xue Yan Lin
Keyword(s):  
Contact Resistance ◽  
Sliding Wear ◽  
Electrical Contact ◽  
Harmful Effect ◽  
Life Time ◽  
High Price ◽  
Well Performance ◽  
Weak Current ◽  
Dc Current ◽  
Resistance Data

Keywords: electrical contact lubricant contact resistance sliding wear Abstract. The contacts must be reliable in the required life time under practical application. Reliability means that the contact resistance can maintain low and stable. Au-plated contact pairs have been used widely for weak current connectors due to its well electrical and anti-corrosion performance. The high price of gold forces manufacturers to reduce the thickness of Au-plated while maintaining well performance. Increasing thin of Au plating causes the microporosity to increase rapidly, which has harmful effect on the performance of connectors. Appropriate lubricant coated on contact pair is a solution to improve the contact property. This paper focuses on sliding contact performance of gold plated contact pairs coupon with 0.25 m thickness and lubricated with water based lubricant named lub-E under damp heat and corrosion environment respectively. The contact pairs are also exposed in damp heat, corrosion environment respectively to evaluate the anti contamination property. The sliding experiment is conducted at frequency of 1Hz, amplitude of 1cm, and load of 0.5N, 1.0N and 1.5N. Contact resistance data is gotten in every sliding cycle at the condition of DC current 100mA and limited voltage 1.0V. Scanning electron microscopy (SEM) is used to observe the sliding track morphology and X-ray energy dispersive spectroscopy (EDS) is used to analyze the element.

Characterization of Rapid Thermally Nitrided Titanium Films Contacting Silicided and Non-Silicided Junctions

1992 ◽  
Vol 260 ◽  
Author(s):  
S. Chittipeddi ◽  
M. J. Kelly ◽  
C. M. Dziuba ◽  
R. B. Irwin ◽  
P. M. Kahora ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electrical Contact ◽  
Electrical Contact Resistance ◽  
Titanium Disilicide ◽  
Nitrided Titanium ◽  
Resistance Data

ABSTRACTIn the present work we have studied rapid thermally nitrided titanium films which contact self-aligned silicided titanium disilicide (TiSi2-salicided) and non-silicided junctions. We correlate electrical contact resistance data to SIMS results.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
X Ray ◽  
Electron Energy Loss Spectrometry ◽  
Resolution Electron ◽  
Order Of Magnitude ◽  
Contact Surfaces ◽  
Electron Energy Loss ◽  
Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

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