Laser-Enhanced sputter or vapor deposition of thin metallic films on ceramic substrates

1992 ◽  
Vol 23 (4) ◽  
pp. 1095-1103 ◽  
Author(s):  
A. J. Pedraza ◽  
M. J. Godbole
Keyword(s):  
Vapor Deposition ◽  
Metallic Films ◽  
Ceramic Substrates

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

Synthesis of Carbon Tubes Using Microwave Plasma-assisted Chemical Vapor Deposition

2000 ◽  
Vol 15 (8) ◽  
pp. 1749-1753 ◽  
Author(s):  
Qing Zhang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
Bo Gan ◽  
Rusli ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Iron Oxide Particles ◽  
Ceramic Substrates ◽  
Field Emission Current ◽  
Electron Field ◽  
Oxide Particles

Carbon tubes were successfully produced using microwave plasma-enhanced chemical vapor deposition on silicon, quartz, and ceramic substrates. The carbon tubes, about 80–100 nm in diameter and a few tens of microns in length, were formed under methane and hydrogen plasma at 720 °C with the aid of iron oxide particles. In this approach, an average tube density of about 109 cm−2 was obtained. The crooked and nonuniform diameters of some tubes suggested that they were composed of incompletely crystallized graphitic shells due to existing defects. The characteristic of the tubes grown upward on the silicon substrate accounted for a remarkably large electron field emission current of 0.1 mA/cm2 from the surface of the tube sample at a low turn-on field of 3 V/μm.

scholarly journals The Chemical Vapor Deposition of Zirconium Carbide onto Ceramic Substrates

1998 ◽  
Vol 555 ◽  
Author(s):  
John A. Glass ◽  
Nick Palmisiano ◽  
R. Edward Welsh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Zirconium Carbide ◽  
Chemical Vapor ◽  
High Melting Point ◽  
Ceramic Substrates ◽  
Film Density ◽  
Compositional Changes ◽  
Controlled Preparation

AbstractZirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system. Laminar and equiaxial microcrystalline morphologies were obtained for superstoichiometric and substoichiometric zirconium carbide; respectively, allowing cursory metallographic identification of composition. Observed reductions in film density associated with zirconium carbide films that contain additional free carbon or excess zirconium are reported. These changes in film density were found to be consistent with compositional changes. An apparently linear relationship (correlation of 0.99) between methane flow in this chemical vapor deposition system and zirconium carbide stoichiometry in the substoichiometric range deposited above ZrC0.61 has been observed.

Excimer Laser Irradiation of Metallic Films on Ceramic Substrates

1991 ◽  
Vol 235 ◽  
Author(s):  
M. J. Godbole ◽  
A. J. Pedraza ◽  
D. H. Lowndes ◽  
J. R. Thompson
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Surface Region ◽  
Copper Films ◽  
Metallic Films ◽  
Ceramic Substrates ◽  
Near Surface ◽  
Excimer Laser Irradiation ◽  
Sputter Deposited ◽  
Density Threshold

ABSTRACTCopper films sputter deposited on mechanically polished (optical finish) and on annealed substrates were laser-irradiated at various energy densities. The effect of the substrate condition on both the evaporation threshold and the morphology of the laser-irradiated metallic films was investigated. The energy density threshold for laser-induced evaporation of the copper films was studied using energy dispersive x-ray spectroscopy (EDS) in a scanning electron microscope (SEM). It was found that for annealed substrates the energy density threshold decreases relative to the threshold for the as-polished condition. These results are compared with predictions of a mathematical model that assumes that the near surface region of the as-polished ceramic is a highly damaged region and, thus, constitutes a thermal barrier. The film remains intact and with almost no change in morphology after laser irradiation at energy densities lower than 0.80 J/cm2 if the substrate has been previously annealed. On the other hand, copper films deposited on as-polished substrates break up during laser processing forming copper islands.

Silicon Oxycarbide Accelerated Chemical Vapor Deposition of Graphitic Networks on Ceramic Substrates for Thermal Management Enhancement

2019 ◽  
Vol 2 (1) ◽  
pp. 452-458 ◽  
Author(s):  
Paul D. Garman ◽  
Jared M. Johnson ◽  
Vishank Talesara ◽  
Hao Yang ◽  
Dan Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Management ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Ceramic Substrates

Formation of periodic ring structures of relief and voids under laser vapor deposition of metallic films

1991 ◽  
Vol 52 (6) ◽  
pp. 438-444 ◽  
Author(s):  
V. N. Bagratashvili ◽  
A. F. Banishev ◽  
S. A. Gnedoy ◽  
V. I. Emelyanov ◽  
A. N. Jerikhin ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metallic Films ◽  
Periodic Ring ◽  
Ring Structures
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