Formation of periodic ring structures of relief and voids under laser vapor deposition of metallic films

1991 ◽  
Vol 52 (6) ◽  
pp. 438-444 ◽  
Author(s):  
V. N. Bagratashvili ◽  
A. F. Banishev ◽  
S. A. Gnedoy ◽  
V. I. Emelyanov ◽  
A. N. Jerikhin ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metallic Films ◽  
Periodic Ring ◽  
Ring Structures

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

ELECTRON TRANSPORT IN MULTIPLY CONNECTED AHARONOV-BOHM RINGS

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2865-2870 ◽  
Author(s):  
WANYIN CUI ◽  
GUOJUN JIN
Keyword(s):  
General Theory ◽  
Transmission Coefficient ◽  
Persistent Currents ◽  
Quantum Waveguide ◽  
One Dimensional ◽  
Multiply Connected ◽  
Periodic Ring ◽  
Ring Structures ◽  
Aharonov Bohm ◽  
Precise Expression

We investigate the transmission coefficient and persistent current of periodically arranged Aharonov-Bohm rings coupled to external leads. A general theory of quantum waveguide based on the transfer matrix method is developed and is used to study one-dimensional periodic ring structures. A precise expression for the transmission coefficient is derived. The results show that in the contacted ring case the conduction band electrons give rise to periodically arranged persistent currents in the structure, while the band gap electrons can cause giant persistent currents in the first few loops. We also observe isolated transmission peaks in the periodically arranged rings connected via leads.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

Mineral precursor for chemical vapor deposition of Rh metallic films

1993 ◽  
Vol 17 (1-3) ◽  
pp. 143-146 ◽  
Author(s):  
Pascal Doppelt ◽  
Valérie Weigel ◽  
Philippe Guinot
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metallic Films
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