Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition

1985 ◽  
Vol 14 (3) ◽  
pp. 343-366 ◽  
Author(s):  
M. E. Zvanut ◽  
F. J. Feigl ◽  
S. R. Butler ◽  
S. L. Titcomb
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Low Pressure ◽  
Silicon Dioxide Films

Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor

1993 ◽  
Vol 11 (6) ◽  
pp. 2954-2963 ◽  
Author(s):  
C. Charles ◽  
G. Giroult‐Matlakowski ◽  
R. W. Boswell ◽  
A. Goullet ◽  
G. Turban ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Low Pressure ◽  
Silicon Dioxide Films

The electrical properties of anodically grown silicon dioxide films

1973 ◽  
Vol 16 (3) ◽  
pp. 309-314 ◽  
Author(s):  
J.D.E. Beynon ◽  
G.G. Bloodworth ◽  
I.M. McLeod
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Silicon Dioxide Films

ChemInform Abstract: Electrical Properties of Silicon Dioxide Films Fabricated at 700 ° C.

1986 ◽  
Vol 17 (11) ◽  
Author(s):  
L. P. TROMBETTA ◽  
R. J. ZETO ◽  
F. J. FEIGL ◽  
M. E. ZVANUT
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Silicon Dioxide Films

Improving stress stability in low-pressure chemical vapor deposited silicon dioxide films by ion implantation

2016 ◽  
Vol 598 ◽  
pp. 103-108 ◽  
Author(s):  
Haiping Shang ◽  
Jianyu Fu ◽  
Changqing Xie ◽  
Zhigang Li ◽  
Dapeng Chen
Keyword(s):  
Ion Implantation ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Dioxide Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical
Sign in / Sign up

Export Citation Format

Share Document