The thermal stability of ohmic contact to n-type InGaAs layer

1995 ◽  
Vol 24 (2) ◽  
pp. 79-82 ◽  
Author(s):  
J. W. Wu ◽  
C. Y. Chang ◽  
K. C. Lin ◽  
E. Y. Chang ◽  
J. S. Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ingaas Layer ◽  
Thermal Stability Of

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Zirconium Mediated Hydrogen Outdiffusion from p-GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

2015 ◽  
Vol 99 ◽  
pp. 81-84 ◽  
Author(s):  
Zhihua Xiong ◽  
Zhenzhen Qin ◽  
Qian Zhao ◽  
Lanli Chen
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Thermal Stability Of

scholarly journals Zirconium Mediated Hydrogen Outdiffusion From p-GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 570-576
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

In situ XPS spectroscopic study of thermal stability of W/Ni bilayer Ohmic contact to n-type 4H-SiC

2020 ◽  
Vol 127 (17) ◽  
pp. 174501
Author(s):  
Meng-meng Gao ◽  
Shu-yue Jiang ◽  
Duo Cao ◽  
Zhi-zhan Chen
Keyword(s):  
Thermal Stability ◽  
Spectroscopic Study ◽  
Ohmic Contact ◽  
In Situ Xps ◽  
Thermal Stability Of

Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs

1987 ◽  
Vol 62 (2) ◽  
pp. 582-590 ◽  
Author(s):  
Yih‐Cheng Shih ◽  
Masanori Murakami ◽  
E. L. Wilkie ◽  
A. C. Callegari
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Interfacial Microstructure ◽  
Thermal Stability Of

Thermal Stability of Plasma-treated Ohmic Contact to n-GaN

2002 ◽  
Author(s):  
Chien-Chi Lee ◽  
Meng-Shin Yeh ◽  
Sheng-Di Lin ◽  
Chien-Ping Lee ◽  
Wei-I Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Thermal Stability Of
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