Electron velocity in Si and GaAs at very high electric fields

1980 ◽  
Vol 37 (9) ◽  
pp. 797-798 ◽  
Author(s):  
P. M. Smith ◽  
M. Inoue ◽  
Jeffrey Frey
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields ◽  
Very High

TEMPERATURE DEPENDENCE OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE PHASE GaN FOR DEVICE MODELING

2008 ◽  
Vol 22 (22) ◽  
pp. 3915-3922 ◽  
Author(s):  
A. R. BINESH ◽  
H. ARABSHAHI ◽  
G. R. EBRAHIMI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
Dominant Role ◽  
Electron Velocity ◽  
Differential Conductance ◽  
Device Modeling ◽  
Wurtzite Phase ◽  
Ensemble Monte Carlo ◽  
Electron Transport Properties ◽  
High Electric Fields

An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperatures as a function of high electric fields. Electronic states within the conduction band valleys at the Γ1, U, M, Γ3 and K are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in GaN is less sensitive to temperature than in other III-V semiconductors like GaAs . So GaN devices are expected to be more tolerant to self-heating and high ambient temperature device modeling. Our steady state velocity-field characteristics are in fair agreement with other recent calculations.

ELECTRON VELOCITY AT HIGH ELECTRIC FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES

1988 ◽  
pp. 337-340
Author(s):  
W.T. Masselink ◽  
N. Braslau ◽  
D. LaTulipe ◽  
W.I. Wangt ◽  
S.L. Wright
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields

scholarly journals Nanosecond air breakdown parameters for electron and microwave beam propagation

1988 ◽  
Vol 6 (1) ◽  
pp. 105-117 ◽  
Author(s):  
A. W. Ali
Keyword(s):  
Electric Fields ◽  
Drift Velocity ◽  
Collision Frequency ◽  
Short Pulse ◽  
Microwave Beam ◽  
Avalanche Ionization ◽  
Air Breakdown ◽  
High Electric Fields ◽  
Ionization Frequency ◽  
Very High

Air breakdown by avalanche ionization plays an important role in the electron beam and microwave propagations. For high electric fields and short pulse applications one needs avalanche ionization parameters for modeling and scaling of experimental devices. However, the breakdown parameters, i.e., the ionization frequency vs E/p (volt. cm−1. Torr−1) in air is uncertain for very high values of E/P. We review the experimental data for the electron drift velocity, the Townsend ionization coefficient in N2 and O2 and develop the ionization frequency and the collision frequency for momentum transfer in air. We construct the E/p vs Pτ diagram and show that our results are in better agreement with the most recent short pulse air breakdown experiments, compared to those predicted by the expression of Felsenthal & Proud (1965). This is because they extrapolate an expression for the drift velocity, linear in E/p, to high values of E/p. Experimentally the drift velocity varies as (E/p)½ in the region of E/p > 100.

Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures

1988 ◽  
Vol 31 (3-4) ◽  
pp. 337-340 ◽  
Author(s):  
W.T. Masselink ◽  
N. Braslau ◽  
D. LaTulipe ◽  
W.I. Wang ◽  
S.L. Wright
Keyword(s):  
Electric Fields ◽  
Electron Velocity ◽  
High Electric Fields

scholarly journals Reducing leakage current and dielectric losses of electroactive polymers through electro-annealing for high-voltage actuation

RSC Advances ◽  
2019 ◽  
Vol 9 (23) ◽  
pp. 12823-12835 ◽  
Author(s):  
Francesco Pedroli ◽  
Alessio Marrani ◽  
Minh-Quyen Le ◽  
Olivier Sanseau ◽  
Pierre-Jean Cottinet ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
High Voltage ◽  
Electroactive Polymers ◽  
Dielectric Losses ◽  
High Electric Fields ◽  
Very High

The electro-annealed polymer, the E-TH sample, shows a reduction in leakage current of 80% for very high electric fields.

HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES

2002 ◽  
Vol 12 (04) ◽  
pp. 1057-1081 ◽  
Author(s):  
S. M. KOMIRENKO ◽  
K. W. KIM ◽  
V. A. KOCHELAP ◽  
M. A. STROSCIO
Keyword(s):  
Electron Transport ◽  
Electric Fields ◽  
High Field ◽  
Transport Model ◽  
Group Iii Nitrides ◽  
Electron Velocity ◽  
Electron Velocity Distribution ◽  
Group Iii ◽  
Field Electron ◽  
High Electric Fields

We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.

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