Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs

1989 ◽  
Vol 54 (4) ◽  
pp. 335-337 ◽  
Author(s):  
H. Sugiura ◽  
R. Iga ◽  
T. Yamada ◽  
M. Yamaguchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs

1991 ◽  
Vol 30 (Part 2, No. 1A) ◽  
pp. L4-L6 ◽  
Author(s):  
Ryuzo Iga ◽  
Hideo Sugiura ◽  
Takeshi Yamada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
C. A. Coronado ◽  
E. Ho ◽  
L. A. Kolodziejski ◽  
C. A. Huber
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Gas Flow ◽  
Molecular Beam ◽  
Laser Wavelength ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Gas Flow Ratio ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

ABSTRACTBy employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been observed when radiation from an argon ion laser is incident to the surface; photons with energies greater than the bandgap at the growth temperature contribute to the enhancement. Photo-thermal effects are ruled out due to the low power densities used (∼200 mW/cm2). Growth rate enhancementis found to be a function of substrate temperature, VI/II gas flow ratio, laser wavelength and intensity. To further understand the effect of the laser on ZnSe growth, solid sources of Zn and Se are used in conjunction with metalorganic gas sources. The effect of laser illumination is found to depend on the combination of precursors employed: both growth rate enhancement and growth rate suppression are observed. Laser-assisted growth has application for achieving. selective area epitaxy and for tuning the surface stoichiometry.

Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InP

1990 ◽  
Vol 29 (Part 1, No. 3) ◽  
pp. 475-478 ◽  
Author(s):  
Ryuzo Iga ◽  
Hideo Sugiura ◽  
Takeshi Yamada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAsP

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L473-L475 ◽  
Author(s):  
Ryuzo Iga ◽  
Takeshi Yamada ◽  
Hideo Sugiura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy
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