Cw laser crystallization of glow discharge a-Si:H on glass substrates

1982 ◽  
Vol 11 (2) ◽  
pp. 303-320 ◽  
Author(s):  
I. D. Calder ◽  
K. L. Kavanagh ◽  
H. M. Naguib ◽  
C. Brassard ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Laser Crystallization ◽  
Glass Substrates ◽  
Cw Laser

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

scholarly journals Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Kuninori Kitahara ◽  
Toshitomo Ishii ◽  
Junki Suzuki ◽  
Takuro Bessyo ◽  
Naoki Watanabe
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Raman Microscopy ◽  
Laser Crystallization ◽  
Local Vibration ◽  
Optical Phonon Mode ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Si Films

Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.

CW Laser Crystallization of Soi Thermal analysis of the most critical parameters

1983 ◽  
Vol 23 ◽  
Author(s):  
J.M. Hode ◽  
J.P. Joly ◽  
P. Jeuch
Keyword(s):  
Thermal Analysis ◽  
Phase Change ◽  
Latent Heat ◽  
Layer Structure ◽  
Thermal Modeling ◽  
Critical Parameters ◽  
Laser Crystallization ◽  
Cw Laser ◽  
Analytical Expressions ◽  
Induced Crystallization

ABSTRACTWe present an overview of the thermal modeling of CW laser induced crystallization of SOI. The dynamical case for a three-layer structure is derived. Effects of the phase change (increase in reflectivity, latent heat) are also treated. Analytical expressions are given and the models are compared to experiment.

Low-Temperature PECVD Polysilicon Crystallization by Rapid Thermal Processing

1998 ◽  
Vol 508 ◽  
Author(s):  
Mark Stewart ◽  
Howard Hovagimian ◽  
Jecko Arakkal ◽  
Sambit Saha ◽  
Miltiadis K. Hatalis
Keyword(s):  
Thermal Processing ◽  
Solid Phase ◽  
Rapid Thermal Processing ◽  
Statistical Design ◽  
Laser Crystallization ◽  
Polysilicon Film ◽  
Pressure Surface ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Scan Speed

AbstractThis work investigates the solid phase crystallization of PECVD amorphous silicon films by rapid thermal processing (RTP) as an alternative to laser crystallization. It is shown that PECVD films can be crystallized by RTP at temperatures compatible with glass substrates. A statistical design approach was used to investigate the effect of the various deposition and annealing conditions on the crystallization temperature, material properties and TFT device performance. The investigated variables include deposition temperature, rf power, pressure, surface treatments, dehydrogenation treatment, source gas, dilutant gas, and RTP scan speed. Important deposition and crystallization parameters will be discussed regarding polysilicon film optimization.

cw laser crystallization of amorphous silicon: Thermal or athermal process

1991 ◽  
Vol 70 (8) ◽  
pp. 4637-4639 ◽  
Author(s):  
M. Ivanda ◽  
K. Furić ◽  
O. Gamulin ◽  
M. Peršin ◽  
D. Gracin
Keyword(s):  
Amorphous Silicon ◽  
Laser Crystallization ◽  
Cw Laser

Amorphous-crystalline boundary dynamics in cw laser crystallization

1982 ◽  
Vol 25 (6) ◽  
pp. 4002-4018 ◽  
Author(s):  
H. J. Zeiger ◽  
John C. C. Fan ◽  
B. J. Palm ◽  
R. L. Chapman ◽  
R. P. Gale
Keyword(s):  
Laser Crystallization ◽  
Cw Laser ◽  
Boundary Dynamics

Use of Glow discharge for Inhibiting Agglomeration of Gold Films on Glass

1969 ◽  
Vol 27 ◽  
pp. 126-127
Author(s):  
G. Paulson ◽  
A. Friedberg
Keyword(s):  
Glow Discharge ◽  
Optical Transparency ◽  
Gold Films ◽  
Glass Substrates ◽  
Glass Surfaces ◽  
Electrical Conductors

A major problem which limits the use of vapor deposited gold films on glass surfaces is the extreme agglomeration or aggregation of the gold during the initials tages of nucleation. An agglomerated film consists of discrete islands or aggregates of gold, and is electrically discontinuous. As the islands grow larger and “touch”, the films become good electrical conductors. Agglomerated gold films may be as thick as 300 angstroms or even thicker before they become electrically continuous. For certain applications it is desirable to prepare electrically continuous films with high optical transparency. Agglomerated films which have adequate conductivity commonly transmitless than 50% of visiblelight. In a recent study, we have investigated the various parameters which control the agglomeration tendencies of vapor deposited gold films on glass substrates. The effect of an oxygen glow discharge in reducing agglomeration is presented here.

The preparation and some properties of transparent conducting ZnO for use in solar cells

1982 ◽  
Vol 60 (10) ◽  
pp. 1387-1390 ◽  
Author(s):  
J. H. Morgan ◽  
D. E. Brodie
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Room Temperature ◽  
Evaporation Rate ◽  
Dc Glow Discharge ◽  
Electron Carrier ◽  
Glass Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Evaporation Technique

The fabrication of transparent conducting films of ZnO is described. These films are deposited on room temperature glass substrates using an enhanced reactive evaporation technique in which the power in a dc glow discharge, the oxygen pressure, and the zinc evaporation rate are controlled separately. Each of these parameters is adjusted to optimize the required film property.Films with ρ = 0.0014 Ω cm and an absorption of ~ 1% at 550 nm and 40 Ω/ have been prepared with no annealing. The electron carrier densities are ~ 1.3 × 1020 cm−3 and the mobilities are ~ 34 cm2/(Vs) with a variation of less than ~ 15% between −120 and +150 °C.

scholarly journals Application of CW Laser Crystallization for Display Devices.

2003 ◽  
Vol 31 (1) ◽  
pp. 50-56
Author(s):  
Akito HARA ◽  
Fumiyo TAKEUCHI ◽  
Michiko TAKEI ◽  
Katsuyuki SUGA ◽  
Kenichi YOSHINO ◽  
...  
Keyword(s):  
Laser Crystallization ◽  
Display Devices ◽  
Cw Laser

Time-Resolved Optical Reflectivity and Transmission During Laser-Induced Oxidation of Cadmium Films

1983 ◽  
Vol 29 ◽  
Author(s):  
L. Baufay ◽  
M. Wautelet ◽  
A. Pigeolet ◽  
R. Andrew
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Oxide Layer ◽  
Probe Beam ◽  
Laser Power ◽  
Time Resolved ◽  
Optical Reflectivity ◽  
Glass Substrates ◽  
Cw Laser

ABSTRACTThe laser-induced oxidation of 2000 Å thick cadmium films on glass substrates is studied by measuring the time-resolved reflectivity and transmission of a probe beam. Under CW laser irradiation, the thickness of the oxide layer is shown to increase linearly with time. Also, the velocity, v, of the CdO-Cd interface increases with increasing laser power, with a step when the melting point of Cd is attained. At the highest powers studied in this work, v varies as v = voexp(−a/P), with vo = 6100 Ås−1 and a=4.8 W.

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