Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation

2019 ◽  
Author(s):  
Vladimir M. Maslovsky ◽  
Dmitrii V. Andreev ◽  
Alexander A. Stolyarov ◽  
Vladimir V. Andreev
Keyword(s):  
Ionizing Radiation ◽  
High Field ◽  
Dielectric Films ◽  
Charge Effects ◽  
Mis Structures

Investigation of Injection- and Radiation-Thermal Processes in Thin Gate Dielectric Films of MIS Structures

2018 ◽  
Vol 781 ◽  
pp. 47-52
Author(s):  
Dmitrii Andreev ◽  
Gennady Bondarenko ◽  
Vladimir Andreev ◽  
Alexander Stolyarov
Keyword(s):  
Thermal Treatment ◽  
High Field ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Dielectric Films ◽  
Mis Structure ◽  
Thermal Processes ◽  
Structure Modification ◽  
Dioxide Film ◽  
Mis Structures

In order to modify the gate dielectric of MIS structures we suggest to implement the injection-thermal treatment which consists in the high-field injection of electrons of set density into the thin dielectric film and the subsequent annealing of the structure. We investigate an influence of modes of the injection-thermal treatment onto the modification of MIS structures. We demonstrate that the processes of MIS structure modification taking place at the injection-thermal treatment in many respects are identical to the processes taking place at the radiation-thermal treatment. We study an influence of modes of the high-field electron injection into the gate dielectric of MIS structure onto densities of charge defects and the injection hardness of samples. Besides, we research an influence of doping of the silicone dioxide film by phosphorus onto the same characteristics.

scholarly journals Simulation of charge processes in dielectric films of MIS structures at simultaneous influence by ionization and high-field injection of electrons

2019 ◽  
Vol 37 ◽  
pp. 279-285 ◽  
Author(s):  
Dmitrii V. Andreev ◽  
Gennady G. Bondarenko ◽  
Vladimir V. Andreev ◽  
Alexander A. Stolyarov
Keyword(s):  
High Field ◽  
Dielectric Films ◽  
Simultaneous Influence ◽  
Mis Structures

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus

2021 ◽  
Vol 12 (2) ◽  
pp. 517-520
Author(s):  
D. V. Andreev ◽  
G. G. Bondarenko ◽  
V. V. Andreev ◽  
A. A. Stolyarov
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
Charge Stability ◽  
Mis Structures

scholarly journals Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2382
Author(s):  
Dmitrii V. Andreev ◽  
Gennady G. Bondarenko ◽  
Vladimir V. Andreev ◽  
Alexander A. Stolyarov
Keyword(s):  
High Field ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Particle Radiation ◽  
Charge Effects ◽  
Functional Capabilities ◽  
Ionization Radiation ◽  
Γ Rays ◽  
Radiation Sensors ◽  
Tunnel Injection

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining the ionization current arising in the dielectric film. The paper proposes the model allowing to make a quantitative analysis of charge effects taking place in the radiation MOS sensors under concurrent influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to properly interpret results of the radiation control. In order to test the designed sensors experimentally, we have utilized γ-rays, α-particle radiation, and proton beams. We have acquired experimental results verifying the enhancement of function capabilities of the radiation MOS sensors when these have been under high-field injection of electrons into the dielectric.

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