Correction to the noise temperature of a waveguide thermal noise generator due to nonuniform heating of the channel

1998 ◽  
Vol 41 (5) ◽  
pp. 462-467
Author(s):  
Yu. V. Kistovich ◽  
O. G. Petrosyan
Metrologia ◽  
2012 ◽  
Vol 49 (4) ◽  
pp. 538-551 ◽  
Author(s):  
Alejandro Díaz-Morcillo ◽  
Antonio Lozano-Guerrero ◽  
Jaime Fornet-Ruiz ◽  
Juan Monzó-Cabrera

1980 ◽  
Vol 23 (5) ◽  
pp. 470-471
Author(s):  
O. M. Reshetnikov

1998 ◽  
Vol 29 (2) ◽  
pp. 195-200
Author(s):  
Dong Bing ◽  
Lei Xiaolin

2018 ◽  
Vol 17 (04) ◽  
pp. 1850030
Author(s):  
Jiaao Song ◽  
Laszlo B. Kish

Classical ways of cooling require some of these elements: phase transition, compressor, nonlinearity, valve and/or switch. A recent example is the 2018 patent of Linear Technology Corporation; they utilize the shot noise of a diode to produce a standalone nonlinear resistor that has [Formula: see text]/2 noise temperature (about 150[Formula: see text]K). While such “resistor” can cool its environment when it is AC coupled to a resistor, the thermal cooling effect is only academically interesting. The importance of the invention is of another nature: In low-noise electronics, it is essential to have resistors with low-noise temperature to improve the signal-to-noise ratio. A natural question is raised: can we use a linear system with feedback to cool and, most importantly, to show reduced noise temperature? Exploring this problem, we were able to produce standalone linear resistors showing strongly reduced thermal noise. Our must successful test shows [Formula: see text]/100 (about 3[Formula: see text]K) noise temperature, as if the resistor would have been immersed in liquid helium. We also found that there is an old solution offering similar results utilizing the virtual ground of an inverting amplifier at negative feedback. There, the “cold” resistor is generated at the input of an amplifier. On the other hand, our system generates the “cold” resistance at the output, which can have practical advantages.


2020 ◽  
Author(s):  
Ruben Asanovski ◽  
Luca Selmi ◽  
Pierpaolo Palestri ◽  
Enrico Caruso

<div>We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.</div>


Sign in / Sign up

Export Citation Format

Share Document