Thermal noise generator of the waveguide-coaxial type

1980 ◽  
Vol 23 (5) ◽  
pp. 470-471
Author(s):  
O. M. Reshetnikov
Keyword(s):  
Thermal Noise ◽  
Noise Generator

scholarly journals 1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs

2020 ◽  
Author(s):  
Ruben Asanovski ◽  
Luca Selmi ◽  
Pierpaolo Palestri ◽  
Enrico Caruso
Keyword(s):  
Cross Correlation ◽  
Thermal Noise ◽  
Noise Generator ◽  
Noise Model ◽  
Voltage Noise ◽  
Free Carriers ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Noise Cross Correlation ◽  
Tcad Simulations

<div>We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.</div>

Measurement of Thermal Noise

1979 ◽  
Vol 16 (1) ◽  
pp. 5-16
Author(s):  
E. Mathieson
Keyword(s):  
Theoretical Prediction ◽  
Shot Noise ◽  
Thermal Noise ◽  
Noise Generator ◽  
Teaching Laboratory ◽  
Relevant Theory ◽  
Noise Current ◽  
Meaningful Comparison ◽  
Laboratory Investigations

This article describes some teaching laboratory investigations of thermal noise. It is shown that under certain conditions the thermal noise current from a resistor may be measured with considerable accuracy, allowing meaningful comparison with theoretical prediction. Brief discussion of relevant theory is included. A novel shot noise generator, used for calibration, is described.

1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs

2020 ◽  
Author(s):  
Ruben Asanovski ◽  
Luca Selmi ◽  
Pierpaolo Palestri ◽  
Enrico Caruso
Keyword(s):  
Cross Correlation ◽  
Thermal Noise ◽  
Noise Generator ◽  
Noise Model ◽  
Voltage Noise ◽  
Free Carriers ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Noise Cross Correlation ◽  
Tcad Simulations

<div>We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.</div>

Ultra-spatially resolved synchrotron powered FT-IR microspectroscopy of individual cells of biological material

1995 ◽  
Vol 53 ◽  
pp. 884-885
Author(s):  
David L. Wetzel ◽  
John A. Reffner ◽  
Gwyn P. Williams
Keyword(s):  
Thermal Noise ◽  
Spot Size ◽  
Acquisition Time ◽  
Thermal Source ◽  
Signal To Noise ◽  
Spatially Resolved ◽  
Good Spatial Resolution ◽  
Small Spot ◽  
Ft Ir ◽  
Ir Microspectroscopy

Synchrotron radiation is 100 to 1000 times brighter than a thermal source such as a globar. It is not accompanied with thermal noise and it is highly directional and nondivergent. For these reasons, it is well suited for ultra-spatially resolved FT-IR microspectroscopy. In efforts to attain good spatial resolution in FT-IR microspectroscopy with a thermal source, a considerable fraction of the infrared beam focused onto the specimen is lost when projected remote apertures are used to achieve a small spot size. This is the case because of divergence in the beam from that source. Also the brightness is limited and it is necessary to compromise on the signal-to-noise or to expect a long acquisition time from coadding many scans. A synchrotron powered FT-IR Microspectrometer does not suffer from this effect. Since most of the unaperatured beam’s energy makes it through even a 12 × 12 μm aperture, that is a starting place for aperture dimension reduction.

EFFECT OF CELLULAR MEMBRANE RESISTIVITY INHOMOGENEITY ON THE THERMAL NOISE-LIMIT

2015 ◽  
Vol 11 (3) ◽  
pp. 3171-3183
Author(s):  
Gyula Vincze
Keyword(s):  
Field Strength ◽  
Thermal Noise ◽  
Cellular Membrane ◽  
Thermal Limit ◽  
Low Frequencies ◽  
Membrane Resistivity ◽  
Noise Limit ◽  
The Asymmetry ◽  
Characteristic Field

Our objective is to generalize the Weaver-Astumian (WA) and Kaune (KA) models of thermal noise limit to the case ofcellular membrane resistivity asymmetry. The asymmetry of resistivity causes different effects in the two models. In the KAmodel, asymmetry decreases the characteristic field strength of the thermal limit over and increases it below the breakingfrequency (10  m), while asymmetry decreases the spectral field strength of the thermal noise limit at all frequencies.We show that asymmetry does not change the character of the models, showing the absence of thermal noise limit at highand low frequencies in WA and KA models, respectively.

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