Doping gradients in layers of gallium phosphide grown by liquid epitaxy

1972 ◽  
Vol 7 (2) ◽  
pp. 168-175 ◽  
Author(s):  
P. D. Sudlow ◽  
A. Mottram ◽  
A. R. Peaker
Keyword(s):  
Gallium Phosphide ◽  
Liquid Epitaxy

Growth of a solid AlxGa1as solution on gallium phosphide substrates by the liquid epitaxy method

1974 ◽  
Vol 17 (3) ◽  
pp. 421-422
Author(s):  
Yu. B. Bolkhovityanov ◽  
Kh. B. Zembatov
Keyword(s):  
Gallium Phosphide ◽  
Liquid Epitaxy

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN

1989 ◽  
Vol 50 (C8) ◽  
pp. C8-141-C8-146
Author(s):  
A. GAUSSMANN ◽  
W. DRACHSEL ◽  
J. H. BLOCK
Keyword(s):  
Gallium Phosphide ◽  
Field Evaporation ◽  
Kinetics Of

Visible Laser Probing (VLP) with GaP Solid Immersion Lens Demonstrating 110 nm Resolution in Common Laser Probing Applications

2016 ◽  
Author(s):  
Travis Eiles ◽  
Patrick Pardy
Keyword(s):  
Gallium Phosphide ◽  
Fault Isolation ◽  
Solid Immersion Lens ◽  
Laser Probing ◽  
Isolation Methods ◽  
Visible Laser ◽  
High Level ◽  
Industry Needs ◽  
Diameter Reduction ◽  
Better Than

Abstract This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.

Polarization of the second order Raman spectrum of gallium phosphide

1966 ◽  
Vol 20 (6) ◽  
pp. 610-612 ◽  
Author(s):  
P.G. Marlow ◽  
J.P. Russell ◽  
C.T. Sennett
Keyword(s):  
Raman Spectrum ◽  
Gallium Phosphide ◽  
Second Order

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

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