Calculation of the temperature distribution along the transmission line of a thermal noise generator

1996 ◽  
Vol 39 (7) ◽  
pp. 759-764
Author(s):  
Yu. V. Kistovich ◽  
O. G. Petrosyan
1980 ◽  
Vol 23 (5) ◽  
pp. 470-471
Author(s):  
O. M. Reshetnikov

2020 ◽  
Author(s):  
Ruben Asanovski ◽  
Luca Selmi ◽  
Pierpaolo Palestri ◽  
Enrico Caruso

<div>We derive an analytical model for 1/f noise in MOSFETs, highlighting a term that is often neglected in literature but becomes important for ultra-thin oxides. Furthermore, we identify an interesting relationship between the thermal noise of the gate impedance and the gate noise due to trapping/detrapping between the free carriers in the channel and the oxide traps, as well as the 1/f noise cross-correlation between drain and gate, showing that a single voltage noise generator is not enough to describe completely the 1/f noise. TCAD simulations are used to verify the model predictive capabilities.</div>


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