Boron Diffusion in Si1−x Gex Strained Layers

1992 ◽  
Vol 281 ◽  
Author(s):  
N. Moriya ◽  
C. A. King ◽  
L. C. Feldman ◽  
H. S. Luftman ◽  
M. L. Green ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Point Defects ◽  
Annealing Temperature ◽  
Equilibrium Concentration ◽  
Boron Diffusion ◽  
Strained Layers ◽  
New Approach ◽  
Charged Point Defect ◽  
Charged Point ◽  
Control Samples

ABSTRACTBoron diffusion in Sia7 Gea3 strained layers has been studied as a function of annealing temperature and is compared to boron diffusion in unstrained Si epitaxial layers. A lower diffusivity was observed in Sia7 Gea3 strained layers as compared to the Si control samples. Using the well-accepted model for boron diffusion via charged point defects in Si, the intrinsic diffusivities of the boron atoms in the Sia7 Gea3 layers were derived and an activation energy of 4.4 eV was estimated for the diffusion process.A new approach to describe the diffusion process is also presented here. In this model, we relate the lower diffusivity to a corresponding change in the charged point defect equilibrium concentration caused by a change in band-gap due to the strain and the existence of foreign atoms in a Si matrix.

Thermodynamics of defect subsystem in zinc telluride crystals

2016 ◽  
Vol 30 (16) ◽  
pp. 1650172 ◽  
Author(s):  
I. V. Horichok ◽  
L. I. Nykyruy ◽  
T. O. Parashchuk ◽  
S. D. Bardashevska ◽  
M. P. Pylyponuk
Keyword(s):  
Vapor Pressure ◽  
Point Defects ◽  
Thermodynamic Potential ◽  
Annealing Temperature ◽  
Equilibrium Concentration ◽  
Zinc Telluride ◽  
Charge Carriers ◽  
Free Charge ◽  
Technological Factors ◽  
Two Temperature

Using method on the base of minimizing of thermodynamic potential in “crystal-vapor” system as a function of defect concentration the equilibrium concentration of point defects and free charge carriers in zinc telluride (ZnTe) crystals have been calculated depending on the technological factors of two-temperature annealing (annealing temperature [Formula: see text] and vapor pressure [Formula: see text] of zinc or [Formula: see text] of tellurium). It is shown that the dominant defects are zinc vacancies the charge state of which depends on the technological conditions of annealing.

scholarly journals An approach based on diffusion to study ligand-macromolecule interaction.

2002 ◽  
Vol 49 (3) ◽  
pp. 703-707 ◽  
Author(s):  
Mohammad R Housaindokht ◽  
Mahmood Bahrololoom ◽  
Shirin Tarighatpoor ◽  
Ali A Mossavi-Movahedi
Keyword(s):  
Methyl Orange ◽  
Diffusion Process ◽  
Binding Constant ◽  
Phosphate Buffer ◽  
Binding Capacity ◽  
Free Ligand ◽  
Hill Equation ◽  
New Approach ◽  
Binding Isotherm ◽  
The Hill

A new approach has been developed to study binding of a ligand to a macromolecule based on the diffusion process. In terms of the Fick's first law, the concentration of free ligand in the presence of a protein can be determined by the measurement of those ligands which are diffused out. This method is applied to the study of binding of methyl-orange to lysozyme in phosphate buffer of pH 6.2, at 30 degrees C. The binding isotherm was determined initially, followed by application of the Hill equation to the data obtained, then binding constant and binding capacity were estimated.

Ab-Initio Calculation for Boron Diffusion in Si/SiGe Strained Layers

2007 ◽  
Vol 51 (96) ◽  
pp. 270
Author(s):  
Young-Kyu KIM ◽  
Kwan-Sun YOON ◽  
Joong-Sik KIM ◽  
Han-Geon KIM ◽  
Taeyoung WON
Keyword(s):  
Ab Initio ◽  
Ab Initio Calculation ◽  
Boron Diffusion ◽  
Strained Layers

Equilibrium concentration of point defects in crystalline4He at O K

1995 ◽  
Vol 78 (1-2) ◽  
pp. 117-134 ◽  
Author(s):  
Jennifer A. Hodgdon ◽  
Frank H. Stillinger
Keyword(s):  
Point Defects ◽  
Equilibrium Concentration

Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Halimaoui ◽  
J. M. Hartmann ◽  
C. Laviron ◽  
R. El-Farhane ◽  
F. Laugier
Keyword(s):  
Point Defects ◽  
Depth Profiling ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Transient Enhanced Diffusion ◽  
Sims Depth Profiling

ABSTRACTPreviously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

scholarly journals Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

1998 ◽  
Vol 73 (6) ◽  
pp. 838-840 ◽  
Author(s):  
J. M. Glasko ◽  
R. G. Elliman ◽  
J. Zou ◽  
D. J. H. Cockayne ◽  
J. D. Fitz Gerald
Keyword(s):  
Annealing Temperature ◽  
Strained Layers ◽  
Defect Microstructure

Instabilities and Point Defects at Step-Free Si(001) and (111) Terraces During High Temperature Annealing

1999 ◽  
Vol 587 ◽  
Author(s):  
Doohan Lee ◽  
Jack M. Blakely
Keyword(s):  
High Temperature ◽  
Point Defect ◽  
Point Defects ◽  
Strain Energy ◽  
Annealing Temperature ◽  
Small Islands ◽  
High Temperature Annealing ◽  
Atomic Steps ◽  
The Stability

AbstractIn this paper we describe observations on the stability of extremely large Si(001) and (111) terraces that are formed by a technique described previously. Following annealing at high temperature and quenching, a series of concentric pits of monoatomic depth are observed with spacing between successive pits of the order of several microns; pits do not form on (111) until the terraces get extremely large. The occurrence of small islands or small pits on the terraces of quenched samples gives information on the majority point defect at the annealing temperature. On (001) samples that are slowly cooled from the annealing temperature, it is observed that pairs of atomic steps have formed on the large terrace; we believe that these result from the tendency of the surface to minimize the strain energy associated with the (2 × 1) reconstruction.

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