Free-Carrier Optical Nonlinearity Due to Carrier Scattering and Nonparabolicity

1970 ◽  
Vol 1 (8) ◽  
pp. 3426-3430 ◽  
Author(s):  
M. S. Sodha ◽  
P. K. Dubey ◽  
S. K. Sharma ◽  
P. K. Kaw
Keyword(s):  
Optical Nonlinearity ◽  
Free Carrier ◽  
Carrier Scattering

scholarly journals Electron mobility dependence on neutron irradiation fluence in heavily irradiated silicon

2021 ◽  
Vol 61 (2) ◽  
Author(s):  
J.V. Vaitkus ◽  
A. Mekys ◽  
Š. Vaitekonis
Keyword(s):  
Neutron Irradiation ◽  
Electron Mobility ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Radiation Detector ◽  
Forward Bias ◽  
Free Carrier ◽  
Detector Efficiency ◽  
Applied Model ◽  
Carrier Scattering

An increase of neutron irradiation fluence caused a decrease of Si radiation detector efficiency that was exceptionally well seen at 1017 neutron/cm2 fluence when the observed I–V characteristic of p-n junction under forward bias and under reverse bias became similar. Therefore the investigation of free carrier mobility could be a key experiment to understand the change of heavily irradiated silicon. The electron mobility was investigated by magnetoresistance means in microstrip silicon samples at temperature range T = 200–276 K. The analysis included the free carrier scattering by phonons, ionized impurities, dipoles and clusters and a contribution of each process was found by fitting the mobility dependence on temperature. The analysis of experimental data clearly demonstrated that the applied model did not explain the mobility in the samples irradiated to the highest fluence. Therefore a new concept of carrier transport is needed, and, as a conclusion, it could be stated that Si irradiated above 1016 cm–2 fluence (and up to 1020 cm–2) is a disordered material with the clusters.

Free Carrier Scattering in Hg0.77Mn0.23Se at Low Temperatures

1991 ◽  
Vol 168 (2) ◽  
pp. K103-K107 ◽  
Author(s):  
O. Žižić ◽  
Z. V. Popović ◽  
A. Milutinović ◽  
V. A. Kulbachinskii
Keyword(s):  
Low Temperatures ◽  
Free Carrier ◽  
Carrier Scattering

On the influence of free-carrier scattering mechanisms on semiconductor thin-film plasma spectra

1986 ◽  
Vol 26 (2) ◽  
pp. 105-109 ◽  
Author(s):  
Y. Demakopoulou ◽  
D. Siapkas ◽  
N.N. Zheleva ◽  
D.B. Kushev
Keyword(s):  
Thin Film ◽  
Free Carrier ◽  
Scattering Mechanisms ◽  
Carrier Scattering ◽  
Semiconductor Thin Film

Free carrier scattering from quasi-2D optical phonons in semiconductor quantum wells and superlattices

1988 ◽  
Vol 4 (4-5) ◽  
pp. 577-580 ◽  
Author(s):  
L. Wendler ◽  
R. Haupt ◽  
F. Bechstedt ◽  
H. Rücker ◽  
R. Enderlein
Keyword(s):  
Quantum Wells ◽  
Free Carrier ◽  
Optical Phonons ◽  
Semiconductor Quantum Wells ◽  
Carrier Scattering

Free carrier scattering mechanism in Bi2Se3 crystals

1973 ◽  
Vol 23 (10) ◽  
pp. 1111-1117 ◽  
Author(s):  
I. F. Bogatyrev ◽  
J. Horák ◽  
A. Vaško ◽  
L. Tichý
Keyword(s):  
Free Carrier ◽  
Scattering Mechanism ◽  
Carrier Scattering

II-VI Compounds with Fe - New Family of Semimagnetic Semiconductors

1986 ◽  
Vol 89 ◽  
Author(s):  
Andrzej Mycielski
Keyword(s):  
Conduction Band ◽  
High Mobility ◽  
Free Carrier ◽  
Free Electrons ◽  
Energy Position ◽  
New Family ◽  
Carrier Scattering ◽  
Semimagnetic Semiconductors ◽  
Donor State ◽  
Substitutional Fe

AbstractSeveral experimental methods: absorption, photoemission and transport measurements were used to determine the energy position of substitutional Fe2+ (3d6) donor state in the band structure of the semimagnetic semiconductor Hg1-v-xCdvFexSe for 0≤v≤0.7 and v+x=l, and x≤0.15. For v≤0.40, Fe2+(3d6) level is a resonant donor located in the conduction band. For v=O (HgSe) we obtain 230 meV for the position of Fe2+(3d6) level with respect to the bottom of the conduction band which coincides with the position of the Fermi level for electron concentration N ≅5x1018 cm-3. Surprisingly, the mobility of free electrons (T∼4.2K) is abnormally high and the Dingle temperature measured in quantum magnetoresistivity oscillations (SdH effect) and magnetooptical measurements is abnormally low. Because of the Coulomb interaction between the ionized donors, at low T, there will appear some correlation of their positions. This may lead to a kind of “liquefying” of the system of ions and to its “crystallisation” (i.e. formation of a superlattice or hyperlattice of ionized donors) at even lower T. The space-ordering of ionized donors influences dramatically the free-carrier scattering and correspondingly explains the high mobility and low Dingle temperature. Finally, we shall also present some magnetic properties of these new semimagnetic materials.

scholarly journals Emerging heterogeneous integrated photonic platforms on silicon

Nanophotonics ◽  
2015 ◽  
Vol 4 (1) ◽  
pp. 143-164 ◽  
Author(s):  
Sasan Fathpour
Keyword(s):  
Integrated Circuits ◽  
Extinction Ratio ◽  
Nonlinear Effects ◽  
Optical Nonlinearity ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Integrated Photonics ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Wide Range

AbstractSilicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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