Theoretical analysis of the gate capacitance inn-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a quantizing magnetic field

1986 ◽  
Vol 64 (2) ◽  
pp. 223-226 ◽  
Author(s):  
K. P. Ghatak ◽  
M. Mondal
Keyword(s):  
Magnetic Field ◽  
Theoretical Analysis ◽  
Gate Capacitance ◽  
Chalcopyrite Semiconductors ◽  
Quantizing Magnetic Field

The Influence of Quantizing Magnetic Field on The Magnetic Susceptibilities in Ultra Thin Films of Dilute Magnetic Materials

1993 ◽  
Vol 313 ◽  
Author(s):  
Kamakhya P Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Thin Films ◽  
Theoretical Analysis ◽  
Film Thickness ◽  
Magnetic Materials ◽  
Ultrathin Films ◽  
Surface Concentration ◽  
Magnetic Susceptibilities ◽  
Quantizing Magnetic Field

ABSTRACTIn this paper we have studied the dia and paramagnetic susceptibilities of the holes in ultrathin films of dilute magnetic materials in the presence of a quantizing magnetic field and compared the same with that of the bulk specimens under magnetic quantization for the purpose of relative comparison. It is found, taking Hg1−xMnxTe and Cd1−xMnxSe as examples, that both the susceptibilities increase with decreasing film thickness and increasing surface concentration in oscillatory Manners. The numerical values of the susceptibilities in ultrathin films of dilute magnetic materials are greater than that of the bulk and the theoretical analysis is in agreement with the experimental data as reported elsewhere.

The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

1994 ◽  
Vol 299 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Theoretical Analysis ◽  
Electron Concentration ◽  
Quantum Limit ◽  
Super Lattice ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Wide Gap ◽  
Quantizing Magnetic Field

AbstractIn this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

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