Electrochromic properties of polycrystalline thin films of tungsten trioxide prepared by chemical vapour deposition

1988 ◽  
Vol 18 (3) ◽  
pp. 447-453 ◽  
Author(s):  
O. Bohnke ◽  
C. Bohnke ◽  
A. Donnadieu ◽  
D. Davazoglou
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Tungsten Trioxide ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Electrochromic Properties ◽  
Polycrystalline Thin Films

scholarly journals Chemical vapour deposition of chromium-doped tungsten disulphide thin films on glass and steel substrates from molecular precursors

2018 ◽  
Vol 6 (35) ◽  
pp. 9537-9544 ◽  
Author(s):  
Ghulam Murtaza ◽  
Sai P. Venkateswaran ◽  
Andrew G. Thomas ◽  
Paul O'Brien ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Molecular Precursors ◽  
Tungsten Disulphide ◽  
Polycrystalline Thin Films ◽  
Steel Substrates

Polycrystalline thin films of chromium doped tungsten disulphide (WS2) have been deposited onto glass and steel substrates by Aerosol-Assisted Chemical Vapour Deposition (AACVD) at 450 °C.

scholarly journals Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

2016 ◽  
Vol 4 (12) ◽  
pp. 2312-2318 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
David J. Lewis ◽  
Xiang Li Zhong ◽  
M. Azad Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Polycrystalline Thin Films

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

Ar stabilisation of the cubic/tetragonal phases of ZrO2 in thin films prepared by ion beam induced chemical vapour deposition

2001 ◽  
Vol 389 (1-2) ◽  
pp. 34-42 ◽  
Author(s):  
J.P Holgado ◽  
J.P Espinós ◽  
F Yubero ◽  
A Justo ◽  
M Ocaña ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Ion Beam ◽  
Chemical Vapour

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Vacuum ◽  
2021 ◽  
Vol 189 ◽  
pp. 110253
Author(s):  
Yujia Jiao ◽  
Qian Jiang ◽  
Junhua Meng ◽  
Jinliang Zhao ◽  
Zhigang Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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