scholarly journals Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

2016 ◽  
Vol 4 (12) ◽  
pp. 2312-2318 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
David J. Lewis ◽  
Xiang Li Zhong ◽  
M. Azad Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Molybdenum Disulfide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Polycrystalline Thin Films

Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

scholarly journals Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Chloride Complexes ◽  
Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

Heterocyclic lead(II) thioureato complexes as single-source precursors for the aerosol assisted chemical vapour deposition of PbS thin films

2018 ◽  
Vol 479 ◽  
pp. 42-48 ◽  
Author(s):  
Kevin I.Y. Ketchemen ◽  
Sixberth Mlowe ◽  
Linda D. Nyamen ◽  
Ahmed A. Aboud ◽  
Matthew P. Akerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Homoleptic zirconium amidates: single source precursors for the aerosol-assisted chemical vapour deposition of ZrO2

2016 ◽  
Vol 4 (45) ◽  
pp. 10731-10739 ◽  
Author(s):  
Amanda L. Catherall ◽  
Michael S. Hill ◽  
Andrew L. Johnson ◽  
Gabriele Kociok-Köhn ◽  
Mary F. Mahon
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Single Source Precursor ◽  
Original Family

We report the development of a true single source precursor for the growth of zirconia thin films by aerosol-assisted chemical vapour deposition using an original family of zirconium(iv) amidate derivatives.

scholarly journals Chalcogenoether complexes of Nb(v) thio- and seleno-halides as single source precursors for low pressure chemical vapour deposition of NbS2 and NbSe2 thin films

2017 ◽  
Vol 46 (30) ◽  
pp. 9824-9832 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Pressure Chemical

A series of thioether complexes of NbSCl3 has been prepared and selected examples demonstrated as precursors to 3R-NbS2 films; deposition of 2H-NbSe2 from [NbSe2Cl3(SenBu2)] is also reported.

scholarly journals Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

2018 ◽  
Vol 47 (8) ◽  
pp. 2628-2637 ◽  
Author(s):  
Chitra Gurnani ◽  
Samantha L. Hawken ◽  
Andrew L. Hector ◽  
Ruomeng Huang ◽  
Marek Jura ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Single Source ◽  
Single Source Precursors ◽  
Distorted Octahedral

Distorted octahedral complexes of Sn(iv) with thio- and seleno-ether ligands have been used as single source precursors in low pressure CVD experiments under various conditions to deposit tin mono and dichalcogenide thin films.

scholarly journals Heterocyclic dithiocarbamato-iron(iii) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films

2016 ◽  
Vol 45 (6) ◽  
pp. 2647-2655 ◽  
Author(s):  
Sixberth Mlowe ◽  
David J. Lewis ◽  
Mohammad Azad Malik ◽  
James Raftery ◽  
Egid B. Mubofu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Iron Sulfide ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

A series of iron(iii) heterocyclic dithiocarbamate complexes were synthesized and characterized and were used as single source precursors to deposit iron sulfide thin films.

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