Model of Schottky-barrier diode low-frequency noise

1993 ◽  
Vol 36 (2) ◽  
pp. 110-117
Author(s):  
V. M. Malyshev ◽  
V. G. Usychenko
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Schottky Barrier Diode ◽  
Frequency Noise ◽  
Low Frequency Noise

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

2016 ◽  
Vol 91 ◽  
pp. 306-312 ◽  
Author(s):  
Zagarzusem Khurelbaatar ◽  
Yeon-Ho Kil ◽  
Kyu-Hwan Shim ◽  
Hyunjin Cho ◽  
Myung-Jong Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Schottky Barrier Diode ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

1998 ◽  
Vol 19 (10) ◽  
pp. 370-372 ◽  
Author(s):  
H. Van Meer ◽  
M. Valenza ◽  
K. Van Der Zanden ◽  
W. De Raedt ◽  
E. Simeon ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing

2012 ◽  
Vol 12 (9) ◽  
pp. 2824-2829 ◽  
Author(s):  
Tse-Pu Chen ◽  
Sheng-Joue Young ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Shih-Ming Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

scholarly journals Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

2020 ◽  
Vol 217 (17) ◽  
pp. 1900880
Author(s):  
Jiseok Kwon ◽  
Collin J. Delker ◽  
David B. Janes ◽  
Charles T. Harris ◽  
Suprem R. Das
Keyword(s):  
Schottky Barrier ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3

2019 ◽  
Vol 49 (1) ◽  
pp. 297-305 ◽  
Author(s):  
P. R. Sekhar Reddy ◽  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Sung-Nam Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Temperature dependence of conduction and low frequency noise characteristics in GaN Schottky barrier diodes

2020 ◽  
pp. 2150134
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Yuan Ren ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Flicker Noise ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Schottky Barrier Diodes ◽  
Low Frequency Noise ◽  
Zero Bias ◽  
Noise Characteristics

In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.

Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Aflatooni ◽  
A. Nathan ◽  
R. Hornsey
Keyword(s):  
Experimental Study ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Reverse Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Material Instability

AbstractWe present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

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