Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Aflatooni ◽  
A. Nathan ◽  
R. Hornsey
Keyword(s):  
Experimental Study ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Reverse Current ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Material Instability

AbstractWe present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMTs

1998 ◽  
Vol 19 (10) ◽  
pp. 370-372 ◽  
Author(s):  
H. Van Meer ◽  
M. Valenza ◽  
K. Van Der Zanden ◽  
W. De Raedt ◽  
E. Simeon ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Long Wavelength ◽  
Noise Current ◽  
Current Correlation ◽  
Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

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