Thermoanalytical investigation of the guest-release process in aromatic-guest clathrates of three-dimensional metal complex hosts

1991 ◽  
Vol 10 (1) ◽  
pp. 29-37 ◽  
Author(s):  
Takafumi Kitazawa ◽  
Yoriko Mizushima ◽  
Junko Shiraha ◽  
Ryoko Taguchi ◽  
Akemi Katoh ◽  
...  
Keyword(s):  
Metal Complex ◽  
Three Dimensional ◽  
Release Process ◽  
Aromatic Guest

A transition metal complex containing pyrazine-2,5-dicarboxylato bridging ligands: a novel three-dimensional manganese(II) compound

2003 ◽  
Vol 6 (9) ◽  
pp. 1224-1227 ◽  
Author(s):  
Garikoitz Beobide ◽  
Oscar Castillo ◽  
Antonio Luque ◽  
Urko Garcı́a-Couceiro ◽  
Juan P. Garcı́a-Teran ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Complex ◽  
Transition Metal Complex ◽  
Three Dimensional ◽  
Bridging Ligands

scholarly journals Analysis of Multiquantal Transmitter Release From Single Cultured Cortical Neuron Terminals

1999 ◽  
Vol 81 (4) ◽  
pp. 1810-1817 ◽  
Author(s):  
Oliver Prange ◽  
Timothy H. Murphy
Keyword(s):  
Cortical Neuron ◽  
Cortical Neurons ◽  
Transmitter Release ◽  
Primary Cultures ◽  
Three Dimensional ◽  
Variable Number ◽  
Release Process ◽  
Release Probability ◽  
Synaptic Terminals ◽  
Neuron Terminals

Analysis of multiquantal transmitter release from single cultured cortical neuron terminals. Application of single synapse recording methods indicates that the amplitude of postsynaptic responses of single CNS synapses can vary greatly among repeated stimuli. To determine whether this observation could be attributed to synapses releasing a variable number of transmitter quanta, we assessed the prevalence of multiquantal transmitter release in primary cultures of cortical neurons with the action potential (AP)-dependent presynaptic turnover of the styryl dye FM1–43 ( Betz and Bewick 1992 , 1993 ; Betz et al. 1996 ). It was assumed that if a high proportion of vesicles within a terminal were loaded with FM1–43 the amount of dye released per stimulus would be proportional to the number of quanta released and/or the probability of release at a terminal. To rule out differences in the amount of release (between terminals) caused by release probability or incomplete loading of terminals, conditions were chosen to maximize both release probability and terminal loading. Three-dimensional reconstruction of terminals was employed to ensure that bouton fluorescence was accurately measured. Analysis of the relationship between the loading of terminals and release indicated that presumed larger terminals (>FM1–43 uptake) release a greater amount of dye per stimulus than smaller terminals, suggesting multiquantal release. The distribution of release amounts across terminals was significantly skewed toward higher values, with 13–17% of synaptic terminals apparently releasing multiple quanta per AP. In conclusion, our data suggest that most synaptic terminals release a relatively constant amount of transmitter per stimulus; however, a subset of terminals releases amounts of FM1–43 that are greater than that expected from a unimodal release process.

scholarly journals Encapsulation of NEM Memory Switches for Monolithic-Three-Dimensional (M3D) CMOS-NEM Hybrid Circuits

2018 ◽  
Author(s):  
Hyun Chan Jo ◽  
Woo Young Choi
Keyword(s):  
Active Region ◽  
Circuit Design ◽  
Three Dimensional ◽  
Nanoelectromechanical Systems ◽  
Release Process ◽  
Passivation Layers ◽  
Encapsulation Method ◽  
Intermetal Dielectric ◽  
Metal Layers ◽  
Mechanical Movement

Considering the isotropic release process of nanoelectromechanical systems (NEMS), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMOS-NEM hybrid circuits. In this paper, we propose a novel encapsulation method of NEM memory switches. It uses alumina (Al2O3) passivation layers which are fully compatible with CMOS baseline process. The Al2O3 bottom passivation layer can protect intermetal dielectric (IMD) and metal interconnection layers from vapor hydrogen fluoride (HF) etch process. Thus, the controllable formation of the cavity for the mechanical movement of NEM memory switches can be achieved without causing any damage to CMOS baseline circuits as well as metal interconnection lines. As a result, NEM memory switches can be located in any places and metal layers of an M3D CMOS-NEM hybrid chip, which makes circuit design easier and more volume-efficient. The feasibility of our proposed method is verified based on experimental results.

Three-Dimensional Solvent-Vapor Map Generated by Supramolecular Metal-Complex Entrapment

2013 ◽  
Vol 125 (48) ◽  
pp. 12847-12850 ◽  
Author(s):  
Avishek Saha ◽  
Zack Panos ◽  
Ty Hanna ◽  
Kewei Huang ◽  
Mayra Hernández-Rivera ◽  
...  
Keyword(s):  
Metal Complex ◽  
Three Dimensional ◽  
Solvent Vapor
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