Resonance tunneling through a nonstationary potential

1985 ◽  
Vol 64 (2) ◽  
pp. 802-810 ◽  
Author(s):  
D. G. Sokolovskii ◽  
M. Yu. Sumetskii
Keyword(s):  
Resonance Tunneling ◽  
Nonstationary Potential

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Resonance tunneling of a classical particle

1996 ◽  
Vol 53 (1) ◽  
pp. 1250-1252 ◽  
Author(s):  
V. Berdichevsky ◽  
M. Gitterman
Keyword(s):  
Classical Particle ◽  
Resonance Tunneling
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