Quantitative Carrier Concentration Profiling by Scanning Resonance Tunneling Spectroscopy

2005 ◽  
Author(s):  
Leonid Bolotov
Keyword(s):  
Carrier Concentration ◽  
Tunneling Spectroscopy ◽  
Resonance Tunneling

Resonance tunneling spectroscopy of heteropoly compounds

2012 ◽  
Vol 115 (6) ◽  
pp. 1068-1074 ◽  
Author(s):  
F. I. Dalidchik ◽  
B. A. Budanov ◽  
N. N. Kolchenko ◽  
E. M. Balashov ◽  
S. A. Kovalevskii
Keyword(s):  
Tunneling Spectroscopy ◽  
Heteropoly Compounds ◽  
Resonance Tunneling

DOPING DEPENDENCE OF SUPERCONDUCTING GAP IN Bi2Sr2-xLaxCuO6+δ (x = 0.2, 0.4, 0.6)

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3227-3229 ◽  
Author(s):  
T. MACHIDA ◽  
Y. KAMIJO ◽  
T. KATO ◽  
K. HARADA ◽  
R. SAITO ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Scanning Tunneling Spectroscopy ◽  
Mean Value ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Superconducting Gap ◽  
Doping Dependence ◽  
Spatially Distributed ◽  
The Mean

We observed the distribution of the superconducting gap in Bi 2 Sr 2-x La x CuO 6+δ ( Bi 2201- La ) by scanning tunneling spectroscopy at x = 0.2 (over doped), 0.4 (optimally doped) and 0.6 (under doped). The superconducting gap was spatially distributed in all samples. As the carrier concentration is reduced, the distribution became much broader and the mean value of superconducting gap, Δ mean increased. We found that the distribution and Δ mean in Bi 2201- La grew more rapidly than in Bi 2 Sr 2 CaCu 2 O 8+δ with decreasing the carrier concentration.

Tunneling spectroscopy in the Charge-Density Wave conductor NbSe3

2004 ◽  
Vol 114 ◽  
pp. 135-136 ◽  
Author(s):  
E. Slot ◽  
K. O'Neill ◽  
H. S.J. van der Zant ◽  
R. E. Thorne
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Density Wave ◽  
Tunneling Spectroscopy

Tunneling spectroscopy of quasi-two-dimensional plasmons

2001 ◽  
Vol 171 (12) ◽  
pp. 1368
Author(s):  
V.A. Volkov ◽  
E.E. Takhtamirov ◽  
D.Yu. Ivanov ◽  
Yu.V. Dubrovskii ◽  
L. Eaves ◽  
...  
Keyword(s):  
Tunneling Spectroscopy ◽  
Two Dimensional

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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