Effect of pressure on the thermo-electromotive force of highly doped and compensated CdSnAs2?Cu? with a deep acceptor level

1991 ◽  
Vol 34 (9) ◽  
pp. 841-844 ◽  
Author(s):  
M. I. Daunov ◽  
A. B. Magomedov ◽  
V. I. Danilov
Keyword(s):  
Electromotive Force ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Effect Of Pressure ◽  
Deep Acceptor Level

Identification of a Deep Acceptor Level in ZnO Due to Silver Doping

2009 ◽  
Vol 39 (5) ◽  
pp. 577-583 ◽  
Author(s):  
J. Chai ◽  
R. J. Mendelsberg ◽  
R. J. Reeves ◽  
J. Kennedy ◽  
H. von Wenckstern ◽  
...  
Keyword(s):  
Acceptor Level ◽  
Silver Doping ◽  
Deep Acceptor ◽  
Deep Acceptor Level

The Role of Hydrogen in Semi-Insulating Inp

1998 ◽  
Vol 513 ◽  
Author(s):  
Yujie Han ◽  
Xunlang Liu ◽  
Jinghua Jiao ◽  
Jiajun Qian ◽  
Yonghai Chen ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Gap ◽  
Electronic States ◽  
Extended Defects ◽  
Acceptor Level ◽  
Hydrogen Atoms ◽  
Deep Acceptor ◽  
Deep Acceptor Level ◽  
Deep Donor

ABSTRACTComplexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen can passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap.Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.g. H12+) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H2+ may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

2014 ◽  
Vol 23 (9) ◽  
pp. 097101 ◽  
Author(s):  
M. Asghar ◽  
K. Mahmood ◽  
M. A. Hasan ◽  
I. T. Ferguson ◽  
R. Tsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Film ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Deep Acceptor Level

Evidence for a deep acceptor level in p-InSb from the variation of hole density with uniaxial stress

1975 ◽  
Vol 16 (8) ◽  
pp. 997-1000 ◽  
Author(s):  
H.J. Mackey ◽  
B.J. Vaughn ◽  
L.M. Rater ◽  
D.G. Seiler
Keyword(s):  
Uniaxial Stress ◽  
Hole Density ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Deep Acceptor Level

scholarly journals Influence of high-temperature annealing on the characteristics of fast electron-irradiated p-n-structures based on neutron doped silicon

2020 ◽  
Vol 55 (4) ◽  
pp. 489-497
Author(s):  
F. P. Korshunov ◽  
N. E. Zhdanovich ◽  
D. N. Zhdanovich
Keyword(s):  
Annealing Temperature ◽  
High Electron ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Temperature Range ◽  
Subsequent Decrease ◽  
Deep Acceptor Level ◽  
Doped Silicon ◽  
Deep Donor ◽  
Two Stages

The investigation results of the annealing influence (Тann = 300–800 ºС) on the minority charge currier lifetime tP in the n-base of p-n-structures, manufactured on the base of neutron transmutation doped silicon (NTD) КОФ300, irradiated at room temperature by different fluences (F = 1 · 1014 – 3 · 1016 cm–2) of electrons with the energy of Еe = 4 MeV are presented. It is established that at low electron fluences (F = 1 · 1014 cm–2), the annealing of minority charge currier lifetime tP in the n-base of p-n-structures occurs in two stages: the first – 320–400 ºС and the second – 550–650 ºС. At higher electron fluences (F = 5 · 1015–2 · 1016 cm–2), three annealing stages occur: the first – 400–450 ºС, the second – 520–650 ºС and the third – 710–770 ºС. At this, the structure barrier capacitance C dependences on Тann at high electron fluences show the geometry capacitance up to the annealing temperatures Тann = 400 ºС. In the annealing temperature range of Тann = 420–570 ºС, the increase in С with maximum is seen at Тann = 480 ºС and a subsequent decrease in the geometry capacitance is seen in the annealing temperature range of Тann = 600–670 ºС, and then again the increase in С occurs in the annealing temperature range of Тann = 720–770 ºС reaching the С values corresponding to those of the non-irradiated samples in the annealing temperature range of Тann = 770–800 ºС. The analysis of the DLTS-spectra of the investigated structures has allowed establishing the formation in the annealing process of the deep acceptor level ЕС – 0.68 eV at Тann > 400 ºС, the deep donor level ЕС – 0.32 eV in the annealing temperature range of Тann = 420–570 ºС and the deep acceptor level ЕС – 0.53 eV at Тann > 700 ºС, which satisfactorily explains the dependences of t P and С on Тann obtained in this paper.

Effective mass-like states of the deep acceptor level of Au and Pt in silicon

1985 ◽  
Vol 56 (3) ◽  
pp. 303-305 ◽  
Author(s):  
G. Armelles ◽  
J. Barrau ◽  
M. Brousseau ◽  
B. Pajot ◽  
C. Naud
Keyword(s):  
Effective Mass ◽  
Acceptor Level ◽  
Deep Acceptor ◽  
Deep Acceptor Level

Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Bhunia ◽  
D.N. Bose
Keyword(s):  
Thermal Activation ◽  
Hydrogen Plasma ◽  
Minority Carrier Lifetime ◽  
Activation Energies ◽  
Band Edge ◽  
Band Edge Emission ◽  
Hydrogen Passivation ◽  
Deep Acceptor ◽  
Strong Band ◽  
Deep Acceptor Level

AbstractThe effects of hydrogen passivation in undoped p-ZnTe single crystals were studied by photoluminescence (PL) and photoconductivity (PC) measurements. Samples were exposed to r.f hydrogen plasma at 250 °C for different durations. Before passivation PL peaks were observed at 2.06 eV, 1.47 eV, 1.33 eV and 1.06 eV. After 60 minutes exposure, samples showed strong band edge green luminescence at 2.37 eV due to an exciton bound to a Cu acceptor. Further exposure to plasma resulted in disappearance of 2.37eV and 2.34 eV peaks due to damage. In PC studies the dark current was found to decrease by a factor of 70 on 60 minutes passivation. From the temperature dependence of PC gain, the minority carrier lifetime τn, was found to go through a maximum of 4.5 × 10−7 sec at 220 K before passivation. After 60 minutes exposure, τn, remained constant at 4.5 × 10−7 sec for T > 220 K and decreased for T < 220 K. The activation energies of τn, were determined and show marked changes on passivation for T > 220 K. Comparison between PL and PC studies showed that the deep acceptor level OTe responsible for emission at 2.06 eV is passivated giving rise to strong band edge emission at 2.37 eV while emission due to the midgap impurity levels at 1.47, 1.33 and 1.05 eV remained unaffected. The thermal activation energies of the PL peaks have also been determined and allow the construction of a defect energy level diagram for ZnTe.

Electron Accumulation in AIGaSb/InAs Qw System, - Evidence for Coexistence of Deep Acceptor and Donor -

1992 ◽  
Vol 262 ◽  
Author(s):  
S. Ideshita ◽  
A. Furukawa ◽  
Y. Mochizuki ◽  
M. Mizuta
Keyword(s):  
Conduction Band ◽  
Acceptor Level ◽  
Quantum Level ◽  
Energy Position ◽  
Deep Acceptor ◽  
Electron Sources ◽  
Electron Accumulation ◽  
P Type ◽  
Type Conduction

ABSTRACTWe investigated the reason of the (imbalanced) accumulation of electrons in AIGaSb/lnAs/AIGaSb QW system in spite of the p-type conduction of undoped AIGaSb. It was found that the concentration of the accumulated electrons negligibly depended on the number of the interfaces, but increased linearly with the effective AlSb thickness. These results indicate that donor levels in AIGaSb are the dominant electron sources. We propose a model that the deep acceptors with larger concentration and donors coexist, and the electron accumulation depends on the energy position of the acceptor in AIGaSb with respect to the quantum level in the InAs well. Acceptor levels obtained experimentally are about 100 meV higher than the bottom of the InAs conduction band, and we succeeded in eliminating the electron accumulation by making the quantum level of the InAs well higher than this acceptor level. The origins of the donors and acceptors are also discussed.

Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors

2000 ◽  
Vol 622 ◽  
Author(s):  
C. Monier ◽  
S. J. Pearton ◽  
A. G. Baca ◽  
P. C. Chang ◽  
L. Zhang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Drift Diffusion Model ◽  
Base Resistance ◽  
Deep Acceptor ◽  
Transport Enhancement ◽  
Deep Acceptor Level ◽  
High Base ◽  
Dc Current

ABSTRACTA drift-diffusion model has been used to explore the performance capabilities of Npn AlGaN/GaN heterojunction bipolar transistors. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain β is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base.

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