Alloying of solid solutions during liquid-phase epitaxy

1977 ◽  
Vol 20 (7) ◽  
pp. 841-847
Author(s):  
A. A. Vilisov ◽  
V. P. Germogenov ◽  
F. S. Kim ◽  
L. E. �piktetova
1995 ◽  
Vol 67 (17) ◽  
pp. 2486-2487 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Jaroshevich ◽  
N. V. Nomerotsky ◽  
M. A. Revenko ◽  
E. M. Trukhanov

2001 ◽  
Vol 68 (1-3) ◽  
pp. 1-6 ◽  
Author(s):  
A.S. Saidov ◽  
A.Sh. Razzakov ◽  
V.A. Risaeva ◽  
E.A. Koschanov

1999 ◽  
Vol 142 (1-4) ◽  
pp. 371-374 ◽  
Author(s):  
E.V Kunitsyna ◽  
I.A Andreev ◽  
N.A Charykov ◽  
Yu.V Solov'ev ◽  
Yu.P Yakovlev

Author(s):  
Н.С. Потапович ◽  
М.В. Нахимович ◽  
В.П. Хвостиков

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 µm) based on InGaAsP / InP heterostructures with an epitaxial p / n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.


2001 ◽  
Vol 35 (8) ◽  
pp. 904-911 ◽  
Author(s):  
T. I. Voronina ◽  
T. S. Lagunova ◽  
E. V. Kunitsyna ◽  
Ya. A. Parkhomenko ◽  
D. A. Vasyukov ◽  
...  

1977 ◽  
Vol 20 (7) ◽  
pp. 836-840
Author(s):  
A. A. Vilisov ◽  
V. P. Germogenov

Author(s):  
V. A. Dmitriev ◽  
L. B. Elfimov ◽  
I. Yu. Lin’kov ◽  
Ya. V. Morozenko ◽  
I. P. Nikitina ◽  
...  

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