The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy

2001 ◽  
Vol 35 (8) ◽  
pp. 904-911 ◽  
Author(s):  
T. I. Voronina ◽  
T. S. Lagunova ◽  
E. V. Kunitsyna ◽  
Ya. A. Parkhomenko ◽  
D. A. Vasyukov ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy

The role of hydrogen in silicon liquid phase epitaxy

1993 ◽  
Vol 17 (3-4) ◽  
pp. 137-140 ◽  
Author(s):  
Ralf Bergmann ◽  
Jurek Kurianski
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy

InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy

1995 ◽  
Vol 67 (17) ◽  
pp. 2486-2487 ◽  
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. S. Jaroshevich ◽  
N. V. Nomerotsky ◽  
M. A. Revenko ◽  
E. M. Trukhanov
Keyword(s):  
Liquid Phase ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy

The role of liquid phase epitaxy during growth of AlGaN by MBE

2011 ◽  
Vol 9 (3-4) ◽  
pp. 580-583 ◽  
Author(s):  
Theodore D. Moustakas ◽  
Anirban Bhattacharyya
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy

Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

2001 ◽  
Vol 68 (1-3) ◽  
pp. 1-6 ◽  
Author(s):  
A.S. Saidov ◽  
A.Sh. Razzakov ◽  
V.A. Risaeva ◽  
E.A. Koschanov
Keyword(s):  
Liquid Phase ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy

Role of critical size of nuclei for liquid-phase epitaxy on polycrystalline Si films

1997 ◽  
Vol 173 (1-2) ◽  
pp. 62-68 ◽  
Author(s):  
Jürgen Kühnle ◽  
Ralf B. Bergmann ◽  
Jürgen H. Werner
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Critical Size ◽  
Si Films ◽  
Size Of Nuclei

Growth of Ga1−xInxAsySb1−y solid solutions from the five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy

1999 ◽  
Vol 142 (1-4) ◽  
pp. 371-374 ◽  
Author(s):  
E.V Kunitsyna ◽  
I.A Andreev ◽  
N.A Charykov ◽  
Yu.V Solov'ev ◽  
Yu.P Yakovlev
Keyword(s):  
Liquid Phase ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy

scholarly journals Фотоэлектрические преобразователи узкополосного излучения на основе гетероструктур InGaAsP/InP

2021 ◽  
Vol 55 (11) ◽  
pp. 1091
Author(s):  
Н.С. Потапович ◽  
М.В. Нахимович ◽  
В.П. Хвостиков
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy ◽  
Narrow Band ◽  
High Quality ◽  
Technological Regimes ◽  
Wide Range ◽  
Photoelectric Converters

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 µm) based on InGaAsP / InP heterostructures with an epitaxial p / n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

Alloying of solid solutions during liquid-phase epitaxy

1977 ◽  
Vol 20 (7) ◽  
pp. 841-847
Author(s):  
A. A. Vilisov ◽  
V. P. Germogenov ◽  
F. S. Kim ◽  
L. E. �piktetova
Keyword(s):  
Liquid Phase ◽  
Solid Solutions ◽  
Liquid Phase Epitaxy
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