Strength of an ?-alloy of titanium taking into consideration its hydrogen impregnation

1988 ◽  
Vol 23 (4) ◽  
pp. 369-374 ◽  
Author(s):  
V. I. Syshchikov ◽  
T. A. Smirnova ◽  
A. A. Prus
Keyword(s):  
Hydrogen Impregnation

Hydrogen impregnation of 08Kh18N10T steel during friction in sulfuric acid

1981 ◽  
Vol 17 (1) ◽  
pp. 27-29
Author(s):  
P. A. Kharin ◽  
G. E. Lazarev ◽  
L. A. Andreev
Keyword(s):  
Sulfuric Acid ◽  
Hydrogen Impregnation ◽  
08Kh18n10t Steel

Features of brittle damages and hydrogen impregnation of high-pressure boiler tube metal

1988 ◽  
Vol 23 (4) ◽  
pp. 421-425
Author(s):  
A. B. Vainman ◽  
O. D. Smiyan ◽  
S. I. Girnyi ◽  
N. P. Kostyuchenko ◽  
A. V. Vasilik ◽  
...  
Keyword(s):  
High Pressure ◽  
Boiler Tube ◽  
Hydrogen Impregnation ◽  
Tube Metal

Kinetics of microcracks in hydrogen impregnation of ?-iron with impurities of phosphorous, sulfur, and carbon

1984 ◽  
Vol 20 (3) ◽  
pp. 229-236
Author(s):  
E. �. Glikman ◽  
E. V. Mindukshev ◽  
V. P. Morozov ◽  
�. K. Zenkova
Keyword(s):  
Hydrogen Impregnation ◽  
Kinetics Of

The question of hydrogen impregnation of solids

1980 ◽  
Vol 16 (2) ◽  
pp. 111-115
Author(s):  
I. M. Svoren'
Keyword(s):  
Hydrogen Impregnation

Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

2000 ◽  
Vol 15 (12) ◽  
pp. 2822-2829 ◽  
Author(s):  
Suk-Kyoung Hong ◽  
Yang Han Yoon ◽  
Yong Ku Baek ◽  
Chang Goo Lee ◽  
Chung Won Suh ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Degradation Behavior ◽  
Hydrogen Impregnation ◽  
Layer Deposition ◽  
Surface Flatness ◽  
Ferroelectric Memory ◽  
Intermetal Dielectric ◽  
Metallization Process

The degradation behavior of integrated Pt/SrBi2Ta2O9/Pt capacitors caused by hydrogen impregnation during the spin-on glass (SOG)-based intermetal dielectric (IMD) process was investigated. SOG was tested as an IMD since it offers better planarity for multilevel metallization processes compared to other SiO2 deposition methods. It was found that the SOG itself does not degrade the ferroelectric performance. Deposition of an under-layer of SiOxNy by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 + N2O + N2 source gases and a SiO2?x capping layer by another PECVD process using SiH4 + N2O source gases produced hydrogen as a reaction by-product. The hydrogen diffused into the SBT layer and degraded the ferroelectric performance during subsequent annealing cycles. A very thin (10 nm) Al2O3 layer grown by atomic layer deposition before the IMD process successfully blocked the impregnation of the hydrogen. Therefore, excellent ferroelectric performance of the SBT capacitors were maintained after the multilevel metallization process as well as passivation. The adoption of SOG in the IMD process greatly improved the surface flatness of the wafer resulting in a higher capacitor yield with very good uniformity in ferroelectric properties over the 8-in.-diameter wafer.

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