Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors

2000 ◽  
Vol 15 (12) ◽  
pp. 2822-2829 ◽  
Author(s):  
Suk-Kyoung Hong ◽  
Yang Han Yoon ◽  
Yong Ku Baek ◽  
Chang Goo Lee ◽  
Chung Won Suh ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Degradation Behavior ◽  
Hydrogen Impregnation ◽  
Layer Deposition ◽  
Surface Flatness ◽  
Ferroelectric Memory ◽  
Intermetal Dielectric ◽  
Metallization Process

The degradation behavior of integrated Pt/SrBi2Ta2O9/Pt capacitors caused by hydrogen impregnation during the spin-on glass (SOG)-based intermetal dielectric (IMD) process was investigated. SOG was tested as an IMD since it offers better planarity for multilevel metallization processes compared to other SiO2 deposition methods. It was found that the SOG itself does not degrade the ferroelectric performance. Deposition of an under-layer of SiOxNy by plasma-enhanced chemical vapor deposition (PECVD) using SiH4 + N2O + N2 source gases and a SiO2?x capping layer by another PECVD process using SiH4 + N2O source gases produced hydrogen as a reaction by-product. The hydrogen diffused into the SBT layer and degraded the ferroelectric performance during subsequent annealing cycles. A very thin (10 nm) Al2O3 layer grown by atomic layer deposition before the IMD process successfully blocked the impregnation of the hydrogen. Therefore, excellent ferroelectric performance of the SBT capacitors were maintained after the multilevel metallization process as well as passivation. The adoption of SOG in the IMD process greatly improved the surface flatness of the wafer resulting in a higher capacitor yield with very good uniformity in ferroelectric properties over the 8-in.-diameter wafer.

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals Atomic layer deposited V2O5 coatings: a promising cathode for Li-ion batteries

2019 ◽  
Vol 10 (1) ◽  
pp. 21-28
Author(s):  
Martyn Pemble ◽  
Ian Povey ◽  
Dimitra Vernardou
Keyword(s):  
Vanadium Pentoxide ◽  
Coulombic Efficiency ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition ◽  
Specific Discharge ◽  
Cathodic And Anodic Processes

A modified, thermal atomic layer deposition process was employed for the pulsed chemical vapor deposition growth of vanadium pentoxide films using tetrakis (dimethylamino) vanadium and water as a co-reagent.Depositions were carried out at 350oC for 400 pulsed CVD cycles, and samples were subsequently annealed for 1hour at 400°C in air to form materials with enhanced cycling stability during the continuous lithium-ion intercala­tion/deintercalation processes. The diffusion coefficient was estimated to be 2.04x10-10 and 4.10x10-10 cm2 s-1 for the cathodic and anodic processes, respectively. These values are comparable or lower than those reported in the literature, indicating the capability of Li+ of getting access into the vanadium pentoxide framework at a fast rate. Overall, it presents a specific discharge capacity of 280 mAh g-1, capacity retention of 75 % after 10000 scans, a coulombic efficiency of 100 % for the first scan, dropping to 85 % for the 10000th scan, and specific energy of 523 Wh g-1.

A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film

2006 ◽  
Vol 914 ◽  
Author(s):  
Kenichi Sekimoto ◽  
Taishi Furukawa ◽  
Noriaki Oshima ◽  
Ken-ichi Tada ◽  
Tetsu Yamakawa
Keyword(s):  
Argon Plasma ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Composition Analysis ◽  
1H And 13C Nmr ◽  
Layer Deposition ◽  
Tantalum Films

AbstractA novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

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