Low-temperature implantation of activator atoms into zinc sulfide under stimulation by atomic hydrogen

1990 ◽  
Vol 52 (2) ◽  
pp. 125-128
Author(s):  
V. F. Kharlamov ◽  
A. �. Bekhert ◽  
A. F. Gorbachev
Keyword(s):  
Low Temperature ◽  
Zinc Sulfide ◽  
Atomic Hydrogen

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Low-Temperature Thermal Expansion of Zinc Oxide. Vibrations in Zinc Oxide and Sphalerite Zinc Sulfide

1971 ◽  
Vol 4 (4) ◽  
pp. 1314-1323 ◽  
Author(s):  
B. Yates ◽  
R. F. Cooper ◽  
M. M. Kreitman
Keyword(s):  
Zinc Oxide ◽  
Thermal Expansion ◽  
Low Temperature ◽  
Zinc Sulfide

Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

2003 ◽  
Vol 251 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
Kenji Momose ◽  
Hiroo Yonezu ◽  
Yuzo Furukawa ◽  
Atsushi Utsumi ◽  
Yusuke Yoshizumi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Crystalline Quality ◽  
High Nitrogen ◽  
Temperature Growth ◽  
Low Temperature Growth

Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L287-L289 ◽  
Author(s):  
Yong Jin Chun ◽  
Takeyoshi Sugaya ◽  
Yoshitaka Okada ◽  
Mitsuo Kawabe
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Surface Cleaning ◽  
Temperature Surface

The Role of Atomic Hydrogen and Oxygen in Low Temperature Growth of Diamond by Microwave Plasma Assisted Cvd

1992 ◽  
Vol 270 ◽  
Author(s):  
Y. Muranaka ◽  
H. Yamashita ◽  
H. Miyadera
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Microwave Plasmas ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Good Crystallinity

ABSTRACTDiamond films grown in the microwave plasmas of CO(7–8%)-O2(0–2.2%)-H2 systems in the range of 130–750°C were characterized by scanning electron microscopy, Raman spectroscopy, and cathodoluminescence (CL) studies. The films grown in the CO-O2-H2 system had much better crystallinity than those grown in the CO-H2 system. This was because oxygen extremely purified diamond films by suppressing polyacetylene inclusion, and prohibited the vacancy formation in the crystallites. These oxygen functions have indicated the possibility that high quality diamond films (FWI-tM of the diamond Raman peak =4.0–4. lcm−1) close to natural diamond (FWHM=3.0cm−1) were obtained in the CO(8%)-O2(2.2%)-H2 system between 400 and 750°C. Though crystallinity deterioration occurred at 130°C, the obtained film (FWHM=10.2cm−1) in the CO(8%)-O2(2.2%)-H 2 system was of good crystallinity comparable to those (FWHM=7–21cm−1) grown by conventional CVD processes and gas systems between 590 and 1327°C. The CO-O2-H2 microwave plasma was concluded to be one of the best environment for the low temperature growth of highly purified diamond films of good crystallinity.

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