Low-temperature diffusion of gold in germanium under the influence of atomic hydrogen

1999 ◽  
Vol 44 (7) ◽  
pp. 804-806 ◽  
Author(s):  
V. M. Matyushin
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Temperature Diffusion

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Formation of Pt decorated Ni–Pt nanocubes through low temperature atomic diffusion – time-resolved elemental analysis of nanoparticle formation

Nanoscale ◽  
2015 ◽  
Vol 7 (21) ◽  
pp. 9927-9934 ◽  
Author(s):  
A. Nagao ◽  
K. Higashimine ◽  
J. L. Cuya Huaman ◽  
T. Iwamoto ◽  
T. Matsumoto ◽  
...  
Keyword(s):  
Low Temperature ◽  
Elemental Analysis ◽  
Diffusion Time ◽  
Atomic Diffusion ◽  
Pt Catalysts ◽  
Time Resolved ◽  
Nanoparticle Formation ◽  
The Core ◽  
Temperature Diffusion

Low temperature diffusion of Pt atoms from the core to the corners and edges of the Ni cube results in the preparation of potential novel cage-structured Pt catalysts.

Low temperature diffusion measurements on d.c. sputtered multilayers of Nb/Ta

1984 ◽  
Vol 3 (3) ◽  
pp. 217-220 ◽  
Author(s):  
R. E. Somekh ◽  
Z. H. Barber ◽  
C. S. Baxter ◽  
P. E. Donovan ◽  
J. E. Evetts ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion

Low-temperature diffusion of phosphorus in silicon

1988 ◽  
Vol 31 (9) ◽  
pp. 737-740 ◽  
Author(s):  
A. N. Gorban' ◽  
V. A. Gorodokin
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion ◽  
Phosphorus In Silicon

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

scholarly journals Influence of Defects on Low Temperature Diffusion of Boron in SiC

2011 ◽  
Vol 02 (09) ◽  
pp. 1205-1211 ◽  
Author(s):  
Ilkham G. Atabaev ◽  
Tojiddin M. Saliev ◽  
Dilmurad Saidov ◽  
Vadim A. Pak ◽  
Khimmatali Juraev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Diffusion
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