Calculating the growth rate of semiconducting layers obtained from liquid metal solutions by epitaxial growth

1971 ◽  
Vol 14 (12) ◽  
pp. 1696-1699
Author(s):  
U. M. Kulish
Keyword(s):  
Growth Rate ◽  
Liquid Metal ◽  
Epitaxial Growth

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

1990 ◽  
Vol 21 (5) ◽  
pp. 29-39 ◽  
Author(s):  
A.N. Daw ◽  
D.K. Pal ◽  
M.K. Kowar
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure

1997 ◽  
Vol 182 (3-4) ◽  
pp. 352-362 ◽  
Author(s):  
Hitoshi Habuka ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Nonlinear Increase

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

Electron-Radiation-Induced Epitaxial Growth of CoSi2 on Si(111)

1989 ◽  
Vol 148 ◽  
Author(s):  
C. W. Nieh ◽  
T. L. Lin ◽  
R. W. Fathauer
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Beam ◽  
Electron Microscope ◽  
Epitaxial Growth ◽  
Electron Energy ◽  
Threshold Energy ◽  
Electron Radiation ◽  
Thermally Activated ◽  
Radiation Induced

ABSTRACTWe report electron-radiation-induced epitaxial growth of CoSi2 on Si(111) from an amorphous Co/Si 1:2 mixture with epitaxial CoSi2 nuclei. Under the electron beam of a Philips EM430 electron microscope, the epitaxial nuclei grow parallel to the surface with a growth rate orders of magnitude higher than that for thermally activated growth. The substrate temperature during irradiation and the electron energy dependence were studied. Electron-radiation-induced growth shows very weak temperature dependence in the temperatures between 100°K and 300°K and the activation energy is 0.03 eV. The growth rate increases significantly as the electron energy increased to 200 KeV which is about the threshold energy for displacing Si atoms.

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