Oxygen diffusion and thermal donor formation in silicon

1982 ◽  
Vol 28 (2) ◽  
pp. 79-92 ◽  
Author(s):  
U. G�sele ◽  
T. Y. Tan
Keyword(s):  
Oxygen Diffusion ◽  
Thermal Donor ◽  
Donor Formation

Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?

1989 ◽  
Vol 48 (3) ◽  
pp. 219-228 ◽  
Author(s):  
U. G�sele ◽  
K. -Y. Ahn ◽  
B. P. R. Marioton ◽  
T. Y. Tan ◽  
S. -T. Lee
Keyword(s):  
Oxygen Diffusion ◽  
Thermal Donor ◽  
Donor Formation

Measurements of Enhanced Oxygen Diffusion in Silicon During Thermal Donor Formation: New Evidence for Possible Mechanisms

1989 ◽  
Vol 163 ◽  
Author(s):  
A.R. Brown ◽  
R. Murray ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Loss ◽  
Enhanced Diffusion ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Annealed Material ◽  
Primary Mechanism ◽  
Donor Formation ◽  
New Evidence

AbstractCzochralski silicon has been heated in a H-plasma at temperatures in the range 300-450°C, and compared with furnace annealed material. Plasma treatments produce enhanced rates of oxygen diffusion jumps, loss of oxygen from solution and formation of thermal donor centres. The available evidence indicates that atomic hydrogen catalyses the enhancements via the oxygen diffusion rate. Donor concentrations greater than 1017cm-3 have been observed in samples heated in a plasma at 350°C. Doubts have been raised about dimer formation being the primary mechanism for oxygen loss in furnace anneals at 350°C, but invoking enhanced diffusion leads to a conflict with stress dichroism data.

Oxygen loss during thermal donor formation in Czochralski silicon: New insights into oxygen diffusion mechanisms

1995 ◽  
Vol 77 (4) ◽  
pp. 1427-1442 ◽  
Author(s):  
S. A. McQuaid ◽  
M. J. Binns ◽  
C. A. Londos ◽  
J. H. Tucker ◽  
A. R. Brown ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Oxygen Loss ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
Diffusion Mechanisms

Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)

1999 ◽  
Vol 33 (12) ◽  
pp. 1279-1283 ◽  
Author(s):  
V. B. Neimash ◽  
E. A. Puzenko ◽  
A. N. Kabaldin ◽  
A. N. Kraichinskii ◽  
N. N. Kras’ko
Keyword(s):  
Oxygen Diffusion ◽  
Thermal Donor ◽  
Donor Formation

Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon

1991 ◽  
Vol 38-41 ◽  
pp. 589-594 ◽  
Author(s):  
V.P. Markevich ◽  
L.F. Makarenko ◽  
L.I. Murin
Keyword(s):  
Oxygen Diffusion ◽  
Thermal Donor ◽  
Donor Formation

On the Question of Oxygen Diffusion During Oxygen Related Thermal Donor Formation In Silicon.

1986 ◽  
Vol 71 ◽  
Author(s):  
G. S. Oehrlein ◽  
T. Y. Tan ◽  
R. L. Kleinhenz ◽  
J. L. Lindstrom
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Oxygen Content ◽  
Oxygen Diffusion ◽  
Heat Treatments ◽  
The Other ◽  
Interstitial Oxygen ◽  
Thermal Donor ◽  
Oxygen Diffusivity ◽  
Donor Formation

In an attempt to decide the question whether enhanced oxygen diffusion is important for heat-treatments of silicon at ∼450ºC where thermal donors are formed we have conducted two types of experiments aimed at providing a measure of the “effective” oxygen diffusivity. First, we have extensively measured the temperature dependence of the thermal donor introduction rate for very short heat treatment times (20min). This measurement provides the thermal activation energy of TD formation. Since effects of long range diffusion and formation of large oxygen clusters are negligible for suchtimes and temperatures and, presumably, thermal donor formation at the lowest heat treatment temperatures is oxygen diffusion limited, it should be possible to interprete the obtained activation energy in terms of oxygen diffusivity. The change of the interstitialoxygen content is immeasureable for 20min heat treatment times. Therefore, the decay of the interstitial oxygen content was measured for longer heat treatments at 450ºC (up to 500hours). The two experiments are complementary in several ways: In one experiment the oxygen diffusion activation energy is extracted, while the other measurement provides the value of the diffusion coefficient at a given temperature. In one case thermal donors are monitored for short heat treatment times while in the other experiment the interstitial oxygen content is measured for long heat treatment times. The present measurements are different from other diffusion experiments in this temperature range where theatomic jump of isolated oxygen is monitored [1]. Here we attempt to extract an effective oxygen diffusivity under conditions of thermal donor formation since the thermal donor formation process itself might be the cause of an enhanced oxygen diffusivity.

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