A simple formula for low-energy sputtering yields

1985 ◽  
Vol 36 (1) ◽  
pp. 37-42 ◽  
Author(s):  
Ch. Steinbr�chel
Keyword(s):  
Simple Formula ◽  
Low Energy ◽  
Sputtering Yields

Sputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment

2009 ◽  
Vol 106 (5) ◽  
pp. 054902 ◽  
Author(s):  
Shiou-Min Wu ◽  
Robbert van de Kruijs ◽  
Erwin Zoethout ◽  
Fred Bijkerk
Keyword(s):  
Low Energy ◽  
Sputtering Yields

Low‐Energy Ar+ Sputtering Yields of Solid and Liquid Tin

1970 ◽  
Vol 41 (12) ◽  
pp. 4953-4957 ◽  
Author(s):  
R. C. Krutenat ◽  
C. Panzera
Keyword(s):  
Low Energy ◽  
Sputtering Yields ◽  
Liquid Tin

Sputtering Yields for Low Energy He+‐, Kr+‐, and Xe+‐Ion Bombardment

1962 ◽  
Vol 33 (5) ◽  
pp. 1842-1845 ◽  
Author(s):  
D. Rosenberg ◽  
G. K. Wehner
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Sputtering Yields

scholarly journals Measurement of Au Sputtering Yields by Neon with Low-Energy Mass Analyzed Ion Beam System

Shinku ◽  
2007 ◽  
Vol 50 (3) ◽  
pp. 217-219 ◽  
Author(s):  
Kiyohiro HINE ◽  
Satoru YOSHIMURA ◽  
Masato KIUCHI ◽  
Satoshi HAMAGUCHI
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Beam System ◽  
Sputtering Yields

Low-Energy Ion Technique for Semiconductor Surface Preparation

2018 ◽  
Vol 284 ◽  
pp. 198-203
Author(s):  
S.N. Chebotarev ◽  
V.A. Irkha ◽  
Adnan A.A. Mohamed
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Surface Preparation ◽  
Target Surface ◽  
Low Energy ◽  
Etching Time ◽  
Semiconductor Surface ◽  
Two Component ◽  
Argon Ions ◽  
Sputtering Yields

We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

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