Amorphous silicon diodes and TFTs for active matrix flat panel display applications

1986 ◽  
Vol 41 (4) ◽  
pp. 297-303 ◽  
Author(s):  
J. Magari�o
Keyword(s):  
Amorphous Silicon ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Active Matrix

73.2: A Novel TFT Pixel and Driving Scheme of Electrically- Suppressed-Helix FLC for Active Matrix Flat Panel Display

2015 ◽  
Vol 46 (1) ◽  
pp. 1077-1080 ◽  
Author(s):  
Tsz Kin Ho ◽  
Man Chun Tseng ◽  
Abhishek Srivastava ◽  
Wei Zhou ◽  
Lei Lei ◽  
...  
Keyword(s):  
Flat Panel Display ◽  
Flat Panel ◽  
Active Matrix

scholarly journals X-ray imaging with amorphous silicon active matrix flat-panel imagers (AMFPIs)

1997 ◽  
Author(s):  
Youcef El-Mohri ◽  
Larry E. Antonuk ◽  
Kyung-Wook Jee ◽  
Manat Maolinbay ◽  
Xiujiang Rong ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Flat Panel ◽  
Active Matrix ◽  
X Ray ◽  
X Ray Imaging ◽  
Flat Panel Imagers

Materials Used in Electroluminescent Displays

MRS Bulletin ◽  
1996 ◽  
Vol 21 (3) ◽  
pp. 49-58 ◽  
Author(s):  
P.D. Rack ◽  
A. Naman ◽  
P.H. Holloway ◽  
S-S. Sun ◽  
R.T. Tuenge
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Liquid Crystal Display ◽  
Light Sources ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Luminance Change ◽  
Active Matrix ◽  
Human Interface ◽  
Improved Performance

The flat-panel-display (FPD) market is experiencing rapid growth due to increased demand for portable computers, communication equipment, and consumer electronic products. In all of these applications, the display is the primary human interface that conveys information. The size of the flat-panel-display market is presently estimated to be $10 billion/year and is projected to grow to over $18 billion/year by 1998. Although most current FPDs utilize either passive- or active-matrix liquid-crystal-display (LCD) technology, electroluminescent (EL) displays and light sources, because of their solid-state construction and self-emissive characteristics, can provide improved performance for many demanding display applications. Thin-film electroluminescent (TFEL) technology has been demonstrated over a broad range of display sizes from 1-in. to 18-in. diagonal with resolutions from 50 to 1,000 lines per inch. Also, because of its unique solid-state characteristic, TFEL technology is well-suited to provide a fully integrated display with the light-emitting element and electronics fabricated on the same substrate. An example of a full-color TFEL display is shown in Figure 1.Thin-film electroluminescent display panels are finding increasing applications in the FPD marketplace due to several fundamental performance advantages over LCDs. These include wide viewing angle, high contrast, wide operating-temperature range, ruggedness, and long lifetime. Alternating-current (ac)-driven monochrome TFEL displays (ACTFEL displays) have become the most reliable, longest running devices on the market. Commercial ACTFEL display panels have operated for more than 50,000 hours with less than 10% luminance change, the equivalent of 25 working years.

Micro Crystalline Silicon TFT by the Metal Capped Diode Laser Thermal Annealing Method

2008 ◽  
Vol 1066 ◽  
Author(s):  
Toshiaki Arai ◽  
Narihiro Morosawa ◽  
Yoshio Inagaki ◽  
Koichi Tatsuki ◽  
Tetsuo Urabe
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Threshold Voltage ◽  
High Performance ◽  
Crystalline Silicon ◽  
Stress Test ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Large Size ◽  
Annealing Method

ABSTRACTA novel crystallization method for silicon based thin film transistor (TFT) is proposed for the fabrication of high performance large size flat panel displays. In spite of using almost the same TFT fabrication process as that of hydrogenated amorphous silicon (a-Si:H) TFT, the proposed metal capped laser thermal annealing method realizes the formation of uniform and dense micro crystalline silicon (μc-Si), and provides mobility of 3.1 cm2/V•s, threshold voltage (ΔVth) of 2.3 V, and sub threshold slope (S) of 0.93 V/decade. Moreover, proposed stacked n+ amorphous silicon structure realizes extremely low off-current maintaining high on-current. As the reliability of TFT, a threshold voltage sift (ΔVth) under the high current bias stress test (BTS) condition was investigated, and realized the assumed ΔVth of +1.77 V after 100,000 hours stress of 10 μA and 50°C. This value is 2 orders smaller than that of a-Si:H TFT and only three times larger than that of low temperature poly silicon (LTPS) TFT.We believe that our μc-Si TFT technology is the suitable solution for the high quality, large size flat panel display mass-production.

Flat Panel Display Substrates

1994 ◽  
Vol 345 ◽  
Author(s):  
Dawne M. Moffatt
Keyword(s):  
Thermal Expansion ◽  
Glass Substrate ◽  
Substrate Material ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Active Matrix ◽  
Thermal Expansion Coefficients ◽  
Field Emission Displays ◽  
Temperature Capability ◽  
Higher Temperature

AbstractThe performance of advanced flat panel displays is intrinsically linked to critical properties of the substrate material. In the manufacture of active-matrix liquid crystal displays (AMLCDs) and some emissive displays, there are certain process steps that require extreme conditions such as strong chemical washes and temperatures in excess of 600°C. As a result, the glass substrate used in these displays must be able to withstand these environments without degradation of its properties. It has become apparent that the flat panel display (FPD) manufacturers will benefit from substrates with improved acid durability, higher temperature capability, and thermal expansion coefficients consistent with other display materials.This paper focuses on one of the less-understood features of the glass substrate: the expansion characteristics as a function of temperature. Thermal expansion is important as it affects the compatibility of the glass with display materials, which, in the case of AMLCDs and some silicon-microtip field emission displays (FED), require an expansion close to that of silicon. In addition, thermal breakage during processing is directly proportional to the expansion coefficient.This study focused on the thermal expansion characteristics of two different FPD substrate glasses. The first one is code 7059, manufactured by Corning Incorporated and currently the standard in AMLCDs. A new substrate composition, Corning code 1737, with enhanced durability, temperature capability, and expansion tuned to the AMLCD applications will also be discussed.

Amorphous Silicon Alloy Technology For Active Matrix Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Z. Yaniv ◽  
V. Cannella ◽  
Y. Baron ◽  
A. Lien ◽  
J. McGill
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
High Quality ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Metal Insulator Metal

ABSTRACTThin film semiconductor devices have been investigated over the past twenty years for application in large area flat panel displays. The development of thin film transistors and diodes based on amorphous silicon (a-Si) alloy materials has made the application of these devices, to display technologies, very attractive. More recently, manufacturing techniques to produce high quality large area films of amorphous silicon alloys have been demonstrated for photovoltaic applications.Most of the current research and development effort on active matrix liquid crystal displays (LCDs) has concentrated on a-Si alloy TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate, both increasing the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, hence, a higher yield can be expected. Metal-insulator-metal and hydrogenated amorphous silicon alloy devices have been proposed for incorporation in LCDs. Performance requirements for a useful active matrix switching element and a comparison among the different a-Si alloy thin film devices used for this purpose will be reviewed.

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