Oxidation kinetics of silicon carbide whiskers studied by X-ray photoelectron spectroscopy

1991 ◽  
Vol 26 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
Pu Sen Wang ◽  
S. M. Hsu ◽  
T. N. Wittberg
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Oxidation Kinetics ◽  
X Ray ◽  
Silicon Carbide Whiskers ◽  
Kinetics Of

Oxidation Kinetics of Mg-, Si-, and Fe-Implanted Aluminum by Using X-ray Photoelectron Spectroscopy

1999 ◽  
Vol 103 (13) ◽  
pp. 2402-2407 ◽  
Author(s):  
T. Do ◽  
N. S. McIntyre ◽  
P. A. W. van der Heide ◽  
U. G. Akano
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxidation Kinetics ◽  
X Ray ◽  
Kinetics Of

Chemical Interactions in the Aluminum-Carbon and Aluminum-Silicon Carbide Systems

1989 ◽  
Vol 170 ◽  
Author(s):  
Benji Maruyama ◽  
Fumio S. Ohuchi ◽  
L. Rabenberg
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Aluminum Carbide ◽  
Carbide Formation ◽  
Matrix Composites ◽  
X Ray ◽  
Oxidation Model ◽  
Aluminum Silicon Carbide ◽  
Kinetics Of ◽  
Aluminum Silicon

AbstractX-ray Photoelectron Spectroscopy (XPS) was used to investigate the influence of O2 and H2O on the formation of aluminum carbide at aluminum-carbon and aluminumsilicon carbide interfaces. It was determined that dosing the interfaces with H2O catalyzed the formation of aluminum carbide in both the aluminum-carbon and aluminum-silicon carbide systems. This result is consistent with the oxidation model of carbide formation [1], previously developed to understand the kinetics of aluminum carbide formation at graphite-aluminum interfaces. These results imply that the formation of aluminum carbide in graphite and silicon carbide reinforced metal matrix composites, which severely degrades the composite mechanical properties by degrading the fiber and interface strength [2], is catalyzed.

N2O Oxidation Kinetics of Ultra Thin Thermally Grown Silicon Nitride: An Angle Resolved X-Ray Photoelectron Spectroscopy Study

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Y. Mao ◽  
J. Lozano ◽  
J. M. White ◽  
D. L. Kwong
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Photoelectron Spectroscopy ◽  
Oxidation Kinetics ◽  
Silicon Oxide ◽  
Spectroscopy Study ◽  
Si Substrate ◽  
X Ray ◽  
Si3n4 Layer ◽  
Kinetics Of

ABSTRACTThe oxidation kinetics of ultra thin thermally NH3-nitrided Si3N4 films in N2O ambient has been extensively studied using angle resolved x-ray photoelectron spectroscopy (ARXPS). Ultra thin (7Å) Si3N4 films formed by RTP nitridation of Si in NH3 were annealed in N2O at various temperatures (700 °C - 1000 °C) for 30 sec. ARXPS showed that Si substrate at the Si-Si3N4 interface was oxidized when annealed at 1000 °C for 30 sec, and was accompanied by the oxidation of the top Si3N4 surface. The total film thickness increases 4–5 times of that of the original Si3N4 layer. However, the oxide formed on the top Si3N4 surface is twice as thick as that formed at the Si3N4/Si interface. No interfacial oxide was found when annealing below 900°C, although the formation of the silicon oxide and oxynitride above the Si3N4 layer was still observed.

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

GROWTH OF OXIDE LAYER ON GERMANIUM (011) SUBSTRATE UNDER DRY AND WET ATMOSPHERES

1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM
Keyword(s):  
Simple Model ◽  
Oxide Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
X Ray ◽  
Apparent Thickness ◽  
Different Temperatures ◽  
Kinetics Of

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

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