Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry

1992 ◽  
Vol 55 (3) ◽  
pp. 289-296 ◽  
Author(s):  
B. S. W. Kuo ◽  
J. C. M. Li ◽  
A. W. Schmid
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Si Substrate ◽  
Interface Thermal Resistance

Interface thermal resistance of nanostructured FeCoCu film and Si substrate

2006 ◽  
Vol 3 (5) ◽  
pp. 1343-1346
Author(s):  
Yuri M. Nikolaenko ◽  
Yuri V. Medvedev ◽  
Yuri A. Genenko ◽  
Mohammad Ghafari ◽  
Horst Hahn
Keyword(s):  
Thermal Resistance ◽  
Si Substrate ◽  
Interface Thermal Resistance

Characterisation of high thermal conductivity thin-film substrate systems and their interface thermal resistance

2018 ◽  
Vol 334 ◽  
pp. 233-242 ◽  
Author(s):  
Alireza Moridi ◽  
Liangchi Zhang ◽  
Weidong Liu ◽  
Steven Duvall ◽  
Andrew Brawley ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Thermal Resistance ◽  
High Thermal Conductivity ◽  
Interface Thermal Resistance ◽  
Film Substrate

Thermal Transport through Solid-Solid Interface with an Interlayer

2011 ◽  
Vol 483 ◽  
pp. 750-754
Author(s):  
Ya Dong Liu ◽  
Ke Dong Bi ◽  
Yun Fei Chen ◽  
Min Hua Chen
Keyword(s):  
Thermal Conductivity ◽  
Heat Flux ◽  
Thermal Resistance ◽  
Thermal Transport ◽  
System Size ◽  
Simulation System ◽  
Nonequilibrium Molecular Dynamics ◽  
Solid Interface ◽  
Interface Thermal Resistance ◽  
System Temperature

Nonequilibrium molecular dynamics (NEMD) approach is developed to investigate the thermal transport across a solid-solid interface between two different materials with an interlayer around it. The effects of system size and the interlayer material’s properties on the interface thermal resistance are considered in our model. The NEMD simulations show that the addition of an interlayer between two highly dissimilar lattices depresses the interface thermal resistance effectively. Meanwhile, the effective thermal conductivity along the direction of heat flux is enhanced with the increasing system temperature. Moreover, the interface thermal resistance after including an interlayer does not depend strongly on the simulation system size.

Study of Effective Thermal Conductivity of Glazed Hollow Bead Concrete

2016 ◽  
Vol 851 ◽  
pp. 823-828
Author(s):  
Bing Zhang ◽  
Zhong Qing Cheng
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Effective Thermal Conductivity ◽  
Thermal Conductivity Coefficient ◽  
Interface Thermal Resistance

Based on analyzing the mechanism of thermal conductivity of glazed hollow bead concrete, this paper divides the channels of thermal conductivity in concrete, constructs the model of thermal conductivity coefficient based on the Theory of Minimum Thermal Resistance, and confirms the model by using the data of other related literatures and the data of our own experiment. The consequence indicates that this model can calculate the thermal conductivity coefficient under arid state exactly. In order to improve the accuracy of this model, we should take the shape of framework, the interface thermal resistance between concrete and framework into consideration

Two-Step Raman Method for Interface Thermal Resistance and In-Plane Thermal Conductivity Characterization of Graphene Interface Materials

2016 ◽  
Author(s):  
Man Li ◽  
Yanan Yue
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Graphene Film ◽  
Phonon Transport ◽  
Interfacial Thermal Resistance ◽  
Transfer Model ◽  
Interface Thermal Resistance ◽  
Graphene Interface ◽  
Interface Materials

The negative influence of substrate on in-plane phonon transport in graphene has been revealed by intensive research, whereas the interaction between phonons couplings across graphene/substrate interface and within graphene is still needed to figure out. In this work, we put forward a two-step Raman method to accomplish interface thermal resistance characterization of graphene/SiO2 and in-plane thermal conductivity measurement of supported graphene by SiO2. In order to calculate the interfacial thermal resistance, the temperature difference between graphene and its substrate was probed using Raman thermometry after the graphene film was uniformly electrically heated. Combing the ITR and the temperature response of graphene to laser heating, the thermal conductivity was computed using the fin heat transfer model. Our results shows that the thermal resistance of free graphene/SiO2 is enormous and the thermal conductivity of the supported graphene is significantly suppressed. The phonons scattering and leakage at the interface are mainly responsible for the reduction of thermal conductivity of graphene on substrate. The morphology change of graphene caused by heating mainly determines the huge interfacial thermal resistance and partly contributes to the suppression of thermal conductivity of graphene. This thermal characterization approach simultaneously realizes the non-contact and non-destructive measurement of interfacial thermal resistance and thermal conductivity of graphene interface materials.

Interface Thermal Resistance and Length Effect on Thermal Conductivitiy of SWNT Bundles

2012 ◽  
Author(s):  
Kasim Toprak ◽  
Yildiz Bayazitoglu
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Effective Thermal Conductivity ◽  
Volume Fraction ◽  
Water Medium ◽  
Interface Thermal Resistance ◽  
Contact Points ◽  
Length Fraction ◽  
Vertically Aligned ◽  
Packing System

Using different calculations and measurement methods, the results for the thermal conductivity in a single wall carbon nanotube (SWNT) are compared. Then, the interface thermal resistance effects on the effective thermal conductivity of multiple SWNTs in a hexagonal packing system submerged in oil, air, and water are studied. The results show that as the interface thermal resistance increases, the effective thermal conductivity decreases. Moreover, length, length fraction, and volume fraction effects on the thermal conductivity of the system submerged in a water medium are approximated by including the interface thermal resistances of the nanotube-matrix and nanotube-nanotube. The systems’ length ranged between 500–3000 nm. The created models contain either vertically aligned or non-straight nanotubes. Non-straight nanotubes systems make one or two contact points with other nanotubes. These contact points’ location vary based on the length ratio known as the length fraction. It is found that the effective thermal conductivity of the SWNT bundle has the highest value when they are uniformly aligned and dispersed without contact. As the density and length of the SWNTs increase, the effective thermal conductivity of the bundle system also increases.

Influence of interface thermal resistance on thermal conductivity of SiC/Al composites

2019 ◽  
Vol 45 (17) ◽  
pp. 23815-23819 ◽  
Author(s):  
Qiuyuan Liu ◽  
Feng Wang ◽  
Wei Shen ◽  
Xiaopan Qiu ◽  
Zhiyong He ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Resistance ◽  
Interface Thermal Resistance
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