Effects of growth conditions on the surface structure of CdTe studied by a scanning tunneling microscope

1993 ◽  
Vol 346 (1-3) ◽  
pp. 53-57 ◽  
Author(s):  
M. Wenzel ◽  
M. Ehinger ◽  
T. Litz ◽  
G. Landwehr
Keyword(s):  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Growth Conditions ◽  
Scanning Tunneling ◽  
Tunneling Microscope

$\sqrt 3 \times \sqrt 3 $ RECONSTRUCTIONS OF Si(111) STUDIED BY SCANNING TUNNELING MICROSCOPY

1994 ◽  
Vol 01 (02n03) ◽  
pp. 395-410 ◽  
Author(s):  
JUN NOGAMI
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Current Understanding ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
Atomic Structures

Many different metals induce [Formula: see text] R30° reconstructions of the Si(111) surface. Although these surfaces share a common periodicity, they can have very different atomic structures. This paper discusses scanning tunneling microscope results and their relationship to the current understanding of the [Formula: see text] surface structure in several of these metal/Si(111) systems.

STM Study of Reconstruction on Si(III)

1996 ◽  
Vol 466 ◽  
Author(s):  
M. Umekawa ◽  
S. Ohara ◽  
S. Tatsukawa ◽  
H. Kuriyama ◽  
S. Matsumoto
Keyword(s):  
Phase Transition ◽  
Phase Boundary ◽  
Surface Structure ◽  
High Temperatures ◽  
Scanning Tunneling Microscope ◽  
Unit Cell ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Straight Line ◽  
Lower Terrace

ABSTRACTThe formation of the boron-induced reconstruction on Si(111) 7×7 surface has been studied with scanning tunneling microscope. By evaporating elemental B on Si elevated at high temperatures, reconstructed structures develop from the step edge to the adjacent lower terrace. They emerge at temperatures between 800°C and 900°C. It indicates that phase transition from 7×7 to 1×1 surface structure is necessary for forming the √3-B reconstructed structures. The phase boundary between 7×7 and regions is a straight line with termination of the faulted halves of 7×7 unit cell. It is also found that strip or triangle regions are formed, depending on the direction of the step propagation.

Nanoscale Etching of Metallic Perovskites Using STM

2004 ◽  
Vol 811 ◽  
Author(s):  
Ø. Dahl ◽  
S. Hallsteinsen ◽  
J. K. Grepstad ◽  
A. Borg ◽  
T. Tybell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Unit Cells

ABSTRACTIn the present work we use a scanning tunneling microscope to modify the surface structure of epitaxial SrRuO3 thin films. Point and line etching experiments were carried out in ultra-highvacuum, using tungsten tips. The point etchings showed that pulses fired at small (< 4.5V) bias voltages did not bring about any physical modifications of the film surface, while voltages in excess of4.5 V led to etched holes accompanied by mounds. Moreover, well-defined line etching was achieved with atypical depth of approximately two unit cells and linewidths as small as 5 nm. The experiments demonstrate that a scanning tunneling microscope can be used for nanometer-scale patterning of SrRuO3 thin film surfaces.

Field Ion-Scanning Tunneling Microscope Equipped with Molecular Beam Epitaxy and Its Application to Study Semiconductor Surface Structure

1993 ◽  
Vol 32 (Part 1, No. 3B) ◽  
pp. 1508-1510 ◽  
Author(s):  
Shiro Miwa ◽  
Yasuhiko Haga ◽  
Etsuo Morita ◽  
Seiichi Arakawa ◽  
Tomihiro Hashizume ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Semiconductor Surface ◽  
Tunneling Microscope
Sign in / Sign up

Export Citation Format

Share Document