Approach to surface structure determination with the scanning tunneling microscope: Multiple-gap imaging and electron-scattering quantum-chemistry theory

1995 ◽  
Vol 52 (15) ◽  
pp. 11446-11456 ◽  
Author(s):  
J. C. Dunphy ◽  
P. Sautet ◽  
D. F. Ogletree ◽  
M. Salmeron
Keyword(s):  
Quantum Chemistry ◽  
Surface Structure ◽  
Electron Scattering ◽  
Structure Determination ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope

$\sqrt 3 \times \sqrt 3 $ RECONSTRUCTIONS OF Si(111) STUDIED BY SCANNING TUNNELING MICROSCOPY

1994 ◽  
Vol 01 (02n03) ◽  
pp. 395-410 ◽  
Author(s):  
JUN NOGAMI
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Current Understanding ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
Atomic Structures

Many different metals induce [Formula: see text] R30° reconstructions of the Si(111) surface. Although these surfaces share a common periodicity, they can have very different atomic structures. This paper discusses scanning tunneling microscope results and their relationship to the current understanding of the [Formula: see text] surface structure in several of these metal/Si(111) systems.

STM Study of Reconstruction on Si(III)

1996 ◽  
Vol 466 ◽  
Author(s):  
M. Umekawa ◽  
S. Ohara ◽  
S. Tatsukawa ◽  
H. Kuriyama ◽  
S. Matsumoto
Keyword(s):  
Phase Transition ◽  
Phase Boundary ◽  
Surface Structure ◽  
High Temperatures ◽  
Scanning Tunneling Microscope ◽  
Unit Cell ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Straight Line ◽  
Lower Terrace

ABSTRACTThe formation of the boron-induced reconstruction on Si(111) 7×7 surface has been studied with scanning tunneling microscope. By evaporating elemental B on Si elevated at high temperatures, reconstructed structures develop from the step edge to the adjacent lower terrace. They emerge at temperatures between 800°C and 900°C. It indicates that phase transition from 7×7 to 1×1 surface structure is necessary for forming the √3-B reconstructed structures. The phase boundary between 7×7 and regions is a straight line with termination of the faulted halves of 7×7 unit cell. It is also found that strip or triangle regions are formed, depending on the direction of the step propagation.

Tunneling Density of States in Quasicrystals and Approximants

1998 ◽  
Vol 12 (05) ◽  
pp. 503-516 ◽  
Author(s):  
D. N. Davydov ◽  
D. Mayou ◽  
C. Berger ◽  
A. G. M. Jansen
Keyword(s):  
Density Of States ◽  
Electron Scattering ◽  
Scanning Tunneling Microscope ◽  
Electron Interaction ◽  
Scanning Tunneling ◽  
Break Junction ◽  
Square Root ◽  
Tunneling Microscope ◽  
Temperature Scanning

Using a low temperature Scanning Tunneling Microscope and a break-junction tunneling technique, the tunneling density of states (DOS) measurements on oxidized and bare surfaces of quasicrystalline icosahedral i-AlPdRe and i-AlCuFe, and of the approximant α-AlMnSi, as well as crystalline non-approximant ω-AlCuFe phase were performed. A narrow pseudogap at the Fermi level of about 50 meV width was found in tunneling spectra of icosahedral and approximant phases. For higher energies, the DOS exhibits a square root energy dependence attributed to electron–electron interaction effects. The tunneling DOS differs from the LMTO calculated DOS. The possible role of the electron scattering and the non-homogeneous electronic structure close to the surface are discussed.

Nanoscale Etching of Metallic Perovskites Using STM

2004 ◽  
Vol 811 ◽  
Author(s):  
Ø. Dahl ◽  
S. Hallsteinsen ◽  
J. K. Grepstad ◽  
A. Borg ◽  
T. Tybell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Unit Cells

ABSTRACTIn the present work we use a scanning tunneling microscope to modify the surface structure of epitaxial SrRuO3 thin films. Point and line etching experiments were carried out in ultra-highvacuum, using tungsten tips. The point etchings showed that pulses fired at small (< 4.5V) bias voltages did not bring about any physical modifications of the film surface, while voltages in excess of4.5 V led to etched holes accompanied by mounds. Moreover, well-defined line etching was achieved with atypical depth of approximately two unit cells and linewidths as small as 5 nm. The experiments demonstrate that a scanning tunneling microscope can be used for nanometer-scale patterning of SrRuO3 thin film surfaces.

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