STM Study of Reconstruction on Si(III)

1996 ◽  
Vol 466 ◽  
Author(s):  
M. Umekawa ◽  
S. Ohara ◽  
S. Tatsukawa ◽  
H. Kuriyama ◽  
S. Matsumoto
Keyword(s):  
Phase Transition ◽  
Phase Boundary ◽  
Surface Structure ◽  
High Temperatures ◽  
Scanning Tunneling Microscope ◽  
Unit Cell ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Straight Line ◽  
Lower Terrace

ABSTRACTThe formation of the boron-induced reconstruction on Si(111) 7×7 surface has been studied with scanning tunneling microscope. By evaporating elemental B on Si elevated at high temperatures, reconstructed structures develop from the step edge to the adjacent lower terrace. They emerge at temperatures between 800°C and 900°C. It indicates that phase transition from 7×7 to 1×1 surface structure is necessary for forming the √3-B reconstructed structures. The phase boundary between 7×7 and regions is a straight line with termination of the faulted halves of 7×7 unit cell. It is also found that strip or triangle regions are formed, depending on the direction of the step propagation.

scholarly journals Nanoscale tailoring of supramolecular crystals via an oriented external electric field

Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15072-15080
Author(s):  
Xingming Zeng ◽  
Sadaf Bashir Khan ◽  
Ayyaz Mahmood ◽  
Shern-Long Lee
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
External Electric Field ◽  
Chemical Reaction ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Supramolecular Crystals

The oriented external electric field of a scanning tunneling microscope (STM) has recently been adapted for controlling the chemical reaction and supramolecular phase transition at surfaces with molecular precision.

$\sqrt 3 \times \sqrt 3 $ RECONSTRUCTIONS OF Si(111) STUDIED BY SCANNING TUNNELING MICROSCOPY

1994 ◽  
Vol 01 (02n03) ◽  
pp. 395-410 ◽  
Author(s):  
JUN NOGAMI
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Current Understanding ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
Atomic Structures

Many different metals induce [Formula: see text] R30° reconstructions of the Si(111) surface. Although these surfaces share a common periodicity, they can have very different atomic structures. This paper discusses scanning tunneling microscope results and their relationship to the current understanding of the [Formula: see text] surface structure in several of these metal/Si(111) systems.

Nanoscale Etching of Metallic Perovskites Using STM

2004 ◽  
Vol 811 ◽  
Author(s):  
Ø. Dahl ◽  
S. Hallsteinsen ◽  
J. K. Grepstad ◽  
A. Borg ◽  
T. Tybell
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Structure ◽  
Scanning Tunneling Microscope ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Unit Cells

ABSTRACTIn the present work we use a scanning tunneling microscope to modify the surface structure of epitaxial SrRuO3 thin films. Point and line etching experiments were carried out in ultra-highvacuum, using tungsten tips. The point etchings showed that pulses fired at small (< 4.5V) bias voltages did not bring about any physical modifications of the film surface, while voltages in excess of4.5 V led to etched holes accompanied by mounds. Moreover, well-defined line etching was achieved with atypical depth of approximately two unit cells and linewidths as small as 5 nm. The experiments demonstrate that a scanning tunneling microscope can be used for nanometer-scale patterning of SrRuO3 thin film surfaces.

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