Kinetics of the (Fe2++OH?)mica?(Fe3++O2?)mica+H oxidation reaction in bulk single-crystal biotite studied by M�ssbauer spectroscopy

1993 ◽  
Vol 20 (4) ◽  
Author(s):  
D.G. Rancourt ◽  
P. Tume ◽  
A.E. Lalonde
Keyword(s):  
Single Crystal ◽  
Oxidation Reaction ◽  
Bulk Single Crystal ◽  
Ssbauer Spectroscopy ◽  
Kinetics Of

Impact Of Synthesis Route on the Water Oxidation Kinetics of Hematite Photoanodes

2020 ◽  
Author(s):  
Camilo A. Mesa ◽  
Ludmilla Steier ◽  
Benjamin Moss ◽  
Laia Francàs ◽  
James E. Thorne ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Reaction Kinetics ◽  
Water Oxidation ◽  
Oxidation Kinetics ◽  
Oxidation Reaction ◽  
Charge Accumulation ◽  
Optical Signals ◽  
Current Voltage ◽  
Voltage Performance ◽  
Kinetics Of

<p><i>Operando</i> spectroelectrochemical analysis is used to determine the water oxidation reaction kinetics for hematite photoanodes prepared using four different synthetic procedures. Whilst these photoanodes exhibit very different current / voltage performance, their underlying water oxidation kinetics are found to be almost invariant. Lower photoanode performance was found to correlate with the observation of optical signals indicative of charge accumulation in mid-gap oxygen vacancy states, indicating these states do not contribute directly to water oxidation.</p>

Study of potential oscillations during reaction of an aluminium single crystal with an aqueous KOH solution

1990 ◽  
Vol 55 (2) ◽  
pp. 345-353 ◽  
Author(s):  
Ivan Halaša ◽  
Milica Miadoková
Keyword(s):  
Aqueous Solutions ◽  
Single Crystal ◽  
Single Crystals ◽  
Periodic Potential ◽  
Optimum Conditions ◽  
Potential Oscillations ◽  
Dilute Aqueous Solutions ◽  
Experimental Findings ◽  
Kinetics Of

The authors investigated periodic potential changes measured on oriented sections of Al single crystals during spontaneous dissolution in dilute aqueous solutions of KOH, with the aim to find optimum conditions for the formation of potential oscillations. It was found that this phenomenon is related with the kinetics of the reaction investigated, whose rate also changed periodically. The mechanism of the oscillations is discussed in view of the experimental findings.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Elastic Modulus of Pb/Sn Solder Joints in Microelectronics

2002 ◽  
Author(s):  
Cemal Basaran ◽  
Jianbin Jiang
Keyword(s):  
Grain Size ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Solder Alloy ◽  
Ultrasonic Testing ◽  
Heterogeneous Materials ◽  
Testing Methods ◽  
Nano Indentation ◽  
Deformation Kinetics ◽  
Kinetics Of

Young’s modulus (E) values published in literature for the eutectic Pb37/Sn63 and near eutectic Pb40/Sn60 solder alloy vary significantly. One reason for this discrepancy is different testing methods for highly rate sensitive heterogeneous materials, like Pb/Sn alloys, yield different results. In this paper, we study different procedures used to obtain the elastic modulus; analytically, by single crystal elasticity and experimentally by ultrasonic testing and Nano indentation. We compare these procedures and propose a procedure for elastic modulus determination. The deformation kinetics of the Pb/Sn solder alloys is discussed at the grain size level.

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