scholarly journals A study of remote plasma enhanced CVD of silicon nitride films

1993 ◽  
Vol 03 (C3) ◽  
pp. C3-233-C3-240 ◽  
Author(s):  
S. E. ALEXANDROV ◽  
M. L. HITCHMAN ◽  
S. SHAMLIAN
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Plasma Enhanced Cvd ◽  
Silicon Nitride Films

Remote Plasma-Enhanced CVD of Fluorinated Silicon Nitride Films

1997 ◽  
Vol 3 (3) ◽  
pp. 111-117 ◽  
Author(s):  
Sergei E. Alexandrov ◽  
Michael L. Hitchman
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Plasma Enhanced Cvd ◽  
Silicon Nitride Films

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

1985 ◽  
Vol 3 (3) ◽  
pp. 867-872 ◽  
Author(s):  
P. D. Richard ◽  
R. J. Markunas ◽  
G. Lucovsky ◽  
G. G. Fountain ◽  
A. N. Mansour ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Remote Plasma ◽  
Gate Insulators ◽  
Plasma Enhanced Cvd
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