The influence of light- and heavy-ion irradiation on the structure, resistivity, and superconducting transition temperature of V3Si. A comparative study

1980 ◽  
Vol 38 (5-6) ◽  
pp. 747-760 ◽  
Author(s):  
O. Meyer ◽  
G. Linker
Keyword(s):  
Transition Temperature ◽  
Comparative Study ◽  
Superconducting Transition Temperature ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Superconducting Transition ◽  
Heavy Ion Irradiation

Effects of heavy-ion irradiation on the magnetic anomaly in Bi2Sr2CaCu2O8+y crystal near the transition temperature

1995 ◽  
Vol 254 (3-4) ◽  
pp. 281-284 ◽  
Author(s):  
A.K. Pradhan ◽  
S.B. Roy ◽  
P. Chaddah ◽  
D. Kanjilal ◽  
C. Chen ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Magnetic Anomaly ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation

First Principle Study on the Electronic Structure of Borides

2014 ◽  
Vol 1035 ◽  
pp. 392-395
Author(s):  
Yong Quan Chai
Keyword(s):  
Electronic Structure ◽  
Transition Temperature ◽  
Comparative Study ◽  
Experimental Research ◽  
Superconducting Transition Temperature ◽  
State Density ◽  
First Principle ◽  
Superconducting Transition ◽  
Structure Characteristics ◽  
Lanthanum Boride

This study utilizes accurate first principle method to conduct a comparative study on he electronic structure of multiple borides. State density of the borides is also summarized. It is found that lanthanum boride has special electronic structure characteristics. Therefore, it is presumed that there is high superconducting transition temperature (Tc) in lanthanum boride. This study is able to provide asignificant theoretical reference for further experimental research.

Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68593-68598 ◽  
Author(s):  
T. T. Hlatshwayo ◽  
J. H. O'Connell ◽  
V. A. Skuratov ◽  
E. Wendler ◽  
E. G. Njoroge ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Comparative Study ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I+ or Kr+ ions at room temperature and thereafter either irradiated with 167 MeV Xe to a fluence of 5 × 1013 cm−2 at 500 °C or annealed at 500 °C under vacuum.

Sound velocity of glassy Pd 80 Si 20 after heavy-ion irradiation at low temperatures

2002 ◽  
Vol 82 (11) ◽  
pp. 2333-2339
Author(s):  
G. Schumacher ◽  
R. C. Birtcher ◽  
D. P. Renusch ◽  
M. Grimsditch ◽  
L. E. Rehn
Keyword(s):  
Sound Velocity ◽  
Low Temperatures ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus
Keyword(s):  
Ion Irradiation ◽  
Gate Oxide ◽  
Heavy Ion ◽  
Irradiation Effects ◽  
Power Mosfets ◽  
Heavy Ion Irradiation ◽  
Oxide Reliability

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

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