Comparative study of the effect of swift heavy ion irradiation at 500 °C and annealing at 500 °C on implanted silicon carbide
Keyword(s):
TEM, RS and RBS were used to characterize polycrystalline SiC specimens individually implanted with 360 keV I+ or Kr+ ions at room temperature and thereafter either irradiated with 167 MeV Xe to a fluence of 5 × 1013 cm−2 at 500 °C or annealed at 500 °C under vacuum.
2015 ◽
Vol 106
◽
pp. 193-198
◽
Keyword(s):
2011 ◽
Vol 166
(8-9)
◽
pp. 739-742
◽
Keyword(s):
Keyword(s):
2017 ◽
Vol 495
◽
pp. 111-117
◽