Hole Injection and Hole Transfer through DNA: The Hopping Mechanism

2012 ◽  
pp. 27-44 ◽  
Author(s):  
Bernd Giese
Keyword(s):  
Hole Injection ◽  
Hole Transfer ◽  
Hopping Mechanism

scholarly journals Intramolecular and interfacial dynamics of triarylamine-based hole transport materials

2018 ◽  
Vol 17 (6) ◽  
pp. 722-733
Author(s):  
Johannes R. Klein ◽  
Mirko Scholz ◽  
Kawon Oum ◽  
Thomas Lenzer
Keyword(s):  
Light Harvesting ◽  
Hole Transport ◽  
Hole Injection ◽  
Interfacial Dynamics ◽  
Hole Transfer ◽  
Good Contact

Hole injection across interfaces is fast but critically depends on good contact between the hole transfer and light-harvesting materials.

Probing single-molecule electron–hole transfer dynamics at a molecule–NiO semiconductor nanocrystalline interface

2017 ◽  
Vol 19 (26) ◽  
pp. 17216-17223 ◽  
Author(s):  
Bharat Dhital ◽  
Vishal Govind Rao ◽  
H. Peter Lu
Keyword(s):  
Single Molecule ◽  
Fluorescence Intensity ◽  
Intensity Fluctuation ◽  
Hole Injection ◽  
Single Molecule Fluorescence ◽  
Electron Hole ◽  
Hole Transfer ◽  
Recombination Mechanism

We probe electron–hole injection as well as a recombination mechanism and dynamics at a dye–NiO interface based on single-molecule fluorescence intensity fluctuation and blinking measurements.

Kinetics of Weak Distance-Dependent Hole Transfer in DNA by Adenine-Hopping Mechanism

2003 ◽  
Vol 125 (23) ◽  
pp. 6842-6843 ◽  
Author(s):  
Kiyohiko Kawai ◽  
Tadao Takada ◽  
Sachiko Tojo ◽  
Tetsuro Majima
Keyword(s):  
Hole Transfer ◽  
Hopping Mechanism ◽  
Kinetics Of

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Quantum Chemical Studies of Hole Transfer in Liquid Hexane

2017 ◽  
Vol 137 (7) ◽  
pp. 435-441
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Toshiyuki Hirano ◽  
Fumitoshi Sato
Keyword(s):  
Quantum Chemical ◽  
Hole Transfer ◽  
Chemical Studies ◽  
Quantum Chemical Studies

Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

2001 ◽  
Vol 708 ◽  
Author(s):  
Mathew K. Mathai ◽  
Keith A. Higginson ◽  
Bing R. Hsieh ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Indium Tin Oxide ◽  
Oxidative Degradation ◽  
Transport Layer ◽  
Hole Injection ◽  
Carrier Injection ◽  
Salt Loading ◽  
Light Emitting ◽  
Hole Transporting ◽  
Intrinsic Degradation ◽  
Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

scholarly journals Effects of Au Nanoparticle Addition to Hole Transfer Layer in Organic Photovoltaic Cells Based on Phthalocyanines and Fullerene

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Akihiko Nagata ◽  
Takeo Oku ◽  
Tsuyoshi Akiyama ◽  
Atsushi Suzuki ◽  
Yasuhiro Yamasaki ◽  
...  
Keyword(s):  
Energy Levels ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Au Nanoparticle ◽  
Molecular Orbital Calculations ◽  
Organic Photovoltaic Cells ◽  
Transfer Layer ◽  
Hole Transfer ◽  
Transmission Electron ◽  
Conversion Efficiencies

Phthalocyanines/fullerene organic photovoltaic cells were fabricated and characterized. Effects of Au nanoparticle addition to a hole transfer layer were also investigated, and power conversion efficiencies of the photovoltaic cells were improved after blending the Au nanoparticle into PEDOT:PSS. Nanostructures of the Au nanoparticles were investigated by transmission electron microscopy and X-ray diffraction. Energy levels of molecules were calculated by molecular orbital calculations, and the nanostructures and electronic property were discussed.

Packing Effect on the Transfer Integrals and Mobility in α,α′-bis(dithieno[3,2-b:2′,3′-d]thiophene) (BDT) and its Heteroatom-Substituted Analogues

2011 ◽  
Vol 64 (12) ◽  
pp. 1587 ◽  
Author(s):  
Ahmad Irfan ◽  
Abdullah G. Al-Sehemi ◽  
Shabbir Muhammad ◽  
Jingping Zhang
Keyword(s):  
Electron Transfer ◽  
Electron Mobility ◽  
Hole Mobility ◽  
Experimental Investigations ◽  
Hole Transfer ◽  
Space Group ◽  
Space Groups ◽  
Transfer Integrals ◽  
Packing Effect ◽  
Good Agreement

Theoretically calculated mobility has revealed that BDT is a hole transfer material, which is in good agreement with experimental investigations. The BDT, NHBDT, and OBDT are predicted to be hole transfer materials in the C2/c space group. Comparatively, hole mobility of BHBDT is 7 times while electron mobility is 20 times higher than the BDT. The packing effect for BDT and designed crystals was investigated by various space groups. Generally, mobility increases in BDT and its analogues by changing the packing from space group C2/c to space groups P1 or . In the designed ambipolar material, BHBDT hole mobility has been predicted 0.774 and 3.460 cm2 Vs–1 in space groups P1 and , which is 10 times and 48 times higher than BDT (0.075 and 0.072 cm2 Vs–1 in space groups P1 and ), respectively. Moreover, the BDT behaves as an electron transfer material by changing the packing from the C2/c space group to P1 and .

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