Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

2001 ◽  
Vol 708 ◽  
Author(s):  
Mathew K. Mathai ◽  
Keith A. Higginson ◽  
Bing R. Hsieh ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Indium Tin Oxide ◽  
Oxidative Degradation ◽  
Transport Layer ◽  
Hole Injection ◽  
Carrier Injection ◽  
Salt Loading ◽  
Light Emitting ◽  
Hole Transporting ◽  
Intrinsic Degradation ◽  
Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

The Study of Hole Injection in OLEDs with Ultra-Thin Sol-Gel TiO2 Layer

2011 ◽  
Vol 189-193 ◽  
pp. 42-46
Author(s):  
You Wang Hu ◽  
Xiao Yan Sun ◽  
Jian Duan
Keyword(s):  
Sol Gel ◽  
Hole Transport ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Carrier Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Pre Treatment

Organic light-emitting diodes (OLEDs) with inserting an ultrathin sol–gel titanium oxide (TiO2) buffer layer between the ITO anode and hole transport layer (HTL) were fabricated. The carrier injection and the device efficiency were affected by surface morphology of TiO2, which was changed by different plasma pre-treatment of ITO. Treated by CF4 plasma, the TiO2 layer is the smoothest, and treated by H2 plasma it is like island. The TiO2 layer like island is favor of carrier injection from the anode, which was attributed to the point discharged.

scholarly journals Three Destinies of Solution-Processable Polymer Light-Emitting Diodes under Long-Time Operation

Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1853
Author(s):  
Ruslana Udovytska ◽  
Pavel Chulkin ◽  
Aleksandra Wypych-Puszkarz ◽  
Jaroslaw Jung
Keyword(s):  
Charge Transport ◽  
Indium Tin Oxide ◽  
Degradation Mechanism ◽  
Protective Layer ◽  
Transport Layer ◽  
Internal Layers ◽  
Carrier Injection ◽  
Light Emitting ◽  
Time Operation ◽  
Long Time

The article describes three different ways of polymer light-emitting diode (PLED) degradation, caused by damage of the protective layer. The electroluminescence and charge-transport properties of a completely encapsulated diode, the diodes with a leaky protective layer and diodes without encapsulation were compared under long-time exploitation. The studied devices incorporated Super Yellow light-emitting poly-(1,4-phenylenevinylene) PPV copolymer as an electroluminescence component, and (poly-(3,4-ethylenedioxythiophene)–poly-(styrene sulfonate) (PEDOT:PSS) as a charge-transport layer between the indium tin oxide (ITO) anode and aluminum–calcium cathode. To analyze the PLED degradation mechanism regarding charge transport, impedance spectroscopy was used. The values of resistance and capacitance of the internal layers revealed an effect of applied voltage on charge carrier injection and recombination. The factors responsible for the device degradation were analyzed on a macromolecular level by comparing the plots of voltage dependence of resistance and capacitance at different operation times elapsed.

Formation of Ohmic Carrier Injection at Anode/organic Interfaces and Carrier Transport Mechanisms of Organic Thin Films

2009 ◽  
Vol 1154 ◽  
Author(s):  
Toshinori Matsushima ◽  
Guang-He Jin ◽  
Yoshihiro Kanai ◽  
Tomoyuki Yokota ◽  
Seiki Kitada ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Organic Thin Films ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Zero Field ◽  
Carrier Injection

AbstractWe have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA), 4,4′,4″-tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

Electroluminescent Quantum Dot Light-Emitting Diodes with ZnO and MoO3 Carrier Transport Layers

2013 ◽  
Vol 677 ◽  
pp. 98-102 ◽  
Author(s):  
Chun Yuan Huang ◽  
Ping Hua Tsai ◽  
Ying Chih Chen ◽  
Hsin Chieh Yu ◽  
Yan Kuin Su
Keyword(s):  
Quantum Dot ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Sol Gel ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Electron Transport Layer ◽  
Device Structure ◽  
Light Emitting

In this article, the quantum dot (QD) light emitting diodes (QDLEDs) with ZnO electron transport layer (ETL) and MoO3hole transport layer (HTL) were demonstrated. The ZnO ETL was fabricated by sol-gel method. To achieve balanced electron and hole injection, hole transport materials including 4,4'-di(N-carbazolyl)biphenyl (CBP) and MoO3were also adapted. The device structure can be simply depicted as indium tin oxide (ITO)/ZnO/Cs2CO3/QD/CBP/MoO3/Au. It was found that the Cs2CO3played an important role to facilitate radiative recombination and reduce the leakage current due to the poor quality of sol-gel fabricated ZnO thin film. Via inserting an annealed Cs2CO3buffer layer with proper thickness, red-emitting QDLEDs with low luminance turn-on voltage of 4.1 V and luminance larger than 100 cd/m2could be obtained. With our demonstration, QDLEDs with ZnO ETL can be a promising device structure for realizing QDLED’s commerizing.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Fabrication of Micro-OLEDs by Room-temperature Curing Nanocontact-print Lithography Using DLC Molds

2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Insulating Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Ito Glass

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

Theoretical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

2012 ◽  
Vol 629 ◽  
pp. 44-48
Author(s):  
Young Wook Hwang ◽  
Kwang Sik Kim ◽  
Tae Young Won
Keyword(s):  
Indium Tin Oxide ◽  
Numerical Study ◽  
Organic Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
The Finite Element Method ◽  
Light Emitting ◽  
Recombination Efficiency ◽  
Interface Barrier ◽  
Recombination Kinetics

In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(electron transport layer). In order to anlayze the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM) in OLEDs. Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure that consists of indium tin oxide (ITO); 2, 2’, 7, 7’ –tetrakis (N, N-diphenylamine) - 9, 9’- spirobi-fluorene (S-TAD); 4, 4’- bis (2,2’- diphenylvinyl) - 1,1’- spirobiphenyl (S-DPVBi); tris (8-quinolinolato) aluminium (Alq3); calsium(Ca).

scholarly journals Interlayer Engineering of Flexible and Large Area Red Organic Light Emitting Diodes Based on a N-Annulated Perylene Diimide Dimer

2019 ◽  
Author(s):  
Mohammad Rahmati ◽  
Majid Pahlevani ◽  
Gregory Welch
Keyword(s):  
Red Light ◽  
Ambient Air ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Large Area ◽  
Average Roughness ◽  
Light Emitting ◽  
Slot Die

<p>Flexible red OLEDs based on a quadruple layer stack in-between electrodes with 160 mm<sup>2</sup> active area were fabricated in ambient air on PET via slot-die coating. For the OLED structure PET/ITO/PEDOT:PSS/PVK/PFO:tPDI<sub>2</sub>N-EH/ZnO/Ag the ink formulations and coating parameters for each layer were systematically evaluated and optimized. The air-stable red-light emitting material tPDI<sub>2</sub>N-EH was successfully utilized as blended homogeneous film with PFO for the emitting layer. The use of an organic hole-transport layer (PVK) and inorganic electron injection layer (ZnO) significantly improved the brightness of the reference device from 4 cd/m<sup>2</sup> to 303 cd/m<sup>2</sup>. Surface analysis using AFM measurements showed that PVK interlayer reduced the surface roughness of the hole injection layer (PEDT:PSS) from 0.45 nm to 0.17 nm, which improved the ability to form uniform emitting layers on top. In addition, the ZnO interlayer improved the average roughness of the device from 1.26 nm to 0.85 nm and reduced the turn-on voltage of the device from 5.0 V to 2.8 V.</p>

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