Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb

2008 ◽  
pp. 176-188
Author(s):  
E. J. Fantner
Keyword(s):  
Hall Effect ◽  
Quantum Limit ◽  
Stress Dependence ◽  
Transverse Magnetoresistance

scholarly journals Quantized thermoelectric Hall effect induces giant power factor in a topological semimetal

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Fei Han ◽  
Nina Andrejevic ◽  
Thanh Nguyen ◽  
Vladyslav Kozii ◽  
Quynh T. Nguyen ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Hall Effect ◽  
Power Factor ◽  
Room Temperature ◽  
Waste Heat ◽  
Quantum Limit ◽  
Topological Materials ◽  
Weyl Semimetal ◽  
Topological Semimetals ◽  
Electronic Entropy

AbstractThermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-saturating thermopower and a quantized thermoelectric Hall conductivity approaching a universal value. Here, we experimentally demonstrate the non-saturating thermopower and quantized thermoelectric Hall effect in the topological Weyl semimetal (WSM) tantalum phosphide (TaP). An ultrahigh longitudinal thermopower $$S_{xx} \sim 1.1 \times 10^3 \, \mu \, {\mathrm{V}} \, {\mathrm{K}}^{ - 1}$$ S x x ~ 1.1 × 1 0 3 μ V K − 1 and giant power factor $$\sim 525 \, \mu \, {\mathrm{W}} \, {\mathrm{cm}}^{ - 1} \, {\mathrm{K}}^{ - 2}$$ ~ 525 μ W cm − 1 K − 2 are observed at ~40 K, which is largely attributed to the quantized thermoelectric Hall effect. Our work highlights the unique quantized thermoelectric Hall effect realized in a WSM toward low-temperature energy harvesting applications.

Electron motion and the Hall effect in monocrystalline zinc

1977 ◽  
Vol 55 (7-8) ◽  
pp. 620-628 ◽  
Author(s):  
C. M. Hurd ◽  
J. E. A. Alderson ◽  
S. P. McAlister
Keyword(s):  
Qualitative Analysis ◽  
Hall Effect ◽  
Path Integral ◽  
Basal Plane ◽  
Electron Motion ◽  
Cyclotron Motion ◽  
Transverse Magnetoresistance ◽  
Hall Resistivity ◽  
Magnetic Breakdown

The Hall resistivity ρ21(B, T) observed in Zn when [Formula: see text] and [Formula: see text] has been measured in fields B = 0.1–2.0 T and at temperatures T = 1.7–680 K. Supporting measurements of the transverse magnetoresistance have also been made at 1.7 K. A qualitative analysis of ρ21(B, T) is given separately for the cases when the cyclotron motion is confined to an axial or to the basal plane. In the latter case, the discussion is supported by path integral calculations based upon model orbits chosen to imitate all the geometrical possibilities arising from magnetic breakdown between the monster and needle sheets. The results provide an explanation of the principal features shown by ρ21(B, T).

Hall effect and transverse magnetoresistance in a low-dimensional conductor HfTe5

1982 ◽  
Vol 42 (11) ◽  
pp. 773-778 ◽  
Author(s):  
Mitsuru Izumi ◽  
Kunimitsu Uchinokura ◽  
Etsuyuki Matsuura ◽  
Shigeki Harada
Keyword(s):  
Hall Effect ◽  
Transverse Magnetoresistance ◽  
Low Dimensional

Conduction band of InAs

1968 ◽  
Vol 46 (15) ◽  
pp. 1669-1675 ◽  
Author(s):  
Clarence C. Y. Kwan ◽  
John C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Valence Band ◽  
Conduction Band ◽  
Infrared Absorption ◽  
Room Temperature ◽  
Impurity Content ◽  
Temperature Measurements ◽  
Energy Separation ◽  
Transverse Magnetoresistance

Measurements of transverse magnetoresistance and Hall effect have been made at 4.2 °K on various In2Se3-doped and In2Te3-doped InAs polycrystalline specimens with magnetic fields up to 3.2 Wb/m2. An analysis of the results gives values of electron concentrations n0 and n1 and mobilities μ0 and μ1 for both the (000) and [Formula: see text] conduction-band minima. From the values of n0 and n1, the energy separation of the (000) and [Formula: see text] minima E01 of pure InAs has been determined to be 0.70 + 0.02 eV and is found to decrease with increasing impurity content, the rate of reduction being 0.13 ± 0.02 eV/at.% selenium and 0.17 ± 0.03 eV/at.% tellurium. Room-temperature measurements of electroreflectance and infrared absorption have also been made, and these indicate that the variation in E01 is due to the movement of the (000) conduction-band minimum relative to the valence band.

Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction

2001 ◽  
Vol 79 (27) ◽  
pp. 4586-4588 ◽  
Author(s):  
Y. Liu ◽  
Z. L. Rang ◽  
A. K. Fung ◽  
C. Cai ◽  
P. P. Ruden ◽  
...  
Keyword(s):  
Hall Effect ◽  
Uniaxial Stress ◽  
Stress Dependence

scholarly journals Unconventional Hall response in the quantum limit of HfTe5

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
S. Galeski ◽  
X. Zhao ◽  
R. Wawrzyńczak ◽  
T. Meng ◽  
T. Förster ◽  
...  
Keyword(s):  
Hall Effect ◽  
Landau Level ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Three Dimensional ◽  
Quantum Limit ◽  
Strong Electron ◽  
Electron Band ◽  
Lowest Landau Level ◽  
Interacting Electrons

AbstractInteracting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.

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