Influence of Ar-milling on cross-section structure of gallium arsenide

1988 ◽  
Vol 10 (2) ◽  
pp. 221-227 ◽  
Author(s):  
G. Vitali ◽  
M. Rossi ◽  
M. Kalitzova ◽  
N. Pashov ◽  
P. Werner ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Cross Section ◽  
Section Structure

Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide

1973 ◽  
Vol 8 (12) ◽  
pp. 5664-5670 ◽  
Author(s):  
Winfield J. Brown ◽  
Dustin A. Woodbury ◽  
J. S. Blakemore
Keyword(s):  
Gallium Arsenide ◽  
Cross Section ◽  
Photoionization Cross Section

scholarly journals Cross-section measurements and production of 72Se with medium to high energy protons using arsenic containing targets

2019 ◽  
Vol 107 (4) ◽  
pp. 279-287 ◽  
Author(s):  
Anthony J. DeGraffenreid ◽  
Dmitri G. Medvedev ◽  
Timothy E. Phelps ◽  
Matthew D. Gott ◽  
Suzanne V. Smith ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Energy Range ◽  
Cross Section ◽  
Incident Energy ◽  
Beam Current ◽  
High Energy ◽  
Excitation Functions ◽  
Maximum Cross Section ◽  
Positron Emitter ◽  
Parent Radionuclide

Abstract Experiments were performed to evaluate production of 72Se, parent radionuclide of the positron emitter 72As, at high energy at the Brookhaven Linac Isotope Producer (BLIP). Excitation functions for 75As(p, xn)72/75Se in the 52-105 MeV energy range were measured by irradiating thin gallium arsenide (GaAs) wafers. Maximum cross section value for the natAs(p, 4n)72Se reaction in the energy range was 103±9 mb at 52±1 MeV. Production size GaAs and arsenic metal (As°) targets were irradiated with 136 μA and 165 μA beam current possessing an initial Linac energy of 117 MeV. A total of 3.77±0.1 GBq (102±3 mCi) of 72Se was produced from a GaAs target at a calculated target entrance energy of 105.4 MeV, and 13.8±0.3 GBq (373±8 mCi) of 72Se from an As° target at a calculated incident energy of 49.5 MeV irradiated for 116.5 h and 68.9 h, respectively.

Analysis of Anomalous Peak Heights in DlTS of MBE-Grown Aluminum Gallium Arsenide

1990 ◽  
Vol 209 ◽  
Author(s):  
W. Lim ◽  
L. P. Trombetta ◽  
Keith Jamison
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Trap Depth ◽  
Sample Temperature ◽  
Emission Rates ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Anomalous Peak

ABSTRACTDLTS data taken on MBE grown AlGaAs films show peak heights which increase, maximize, and then decrease with increasing sample temperature. This behavior is difficult to explain within the context of conventional DLTS analysis. We suggest that the data can be accounted for by a trap with a temperature dependent capture cross section in conjunction with a model described by Lee and Borrego in which electron and hole emission rates are comparable. Using this analysis, we obtain an effective trap depth Eeff of 0.35 eV and a capture cross section activation energy Eσ 0.25 eV.

Sign in / Sign up

Export Citation Format

Share Document