Analysis of Anomalous Peak Heights in DlTS of MBE-Grown Aluminum Gallium Arsenide

1990 ◽  
Vol 209 ◽  
Author(s):  
W. Lim ◽  
L. P. Trombetta ◽  
Keith Jamison
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Trap Depth ◽  
Sample Temperature ◽  
Emission Rates ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Anomalous Peak

ABSTRACTDLTS data taken on MBE grown AlGaAs films show peak heights which increase, maximize, and then decrease with increasing sample temperature. This behavior is difficult to explain within the context of conventional DLTS analysis. We suggest that the data can be accounted for by a trap with a temperature dependent capture cross section in conjunction with a model described by Lee and Borrego in which electron and hole emission rates are comparable. Using this analysis, we obtain an effective trap depth Eeff of 0.35 eV and a capture cross section activation energy Eσ 0.25 eV.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

A deep semiconductor defect with continuously variable activation energy and capture cross section

1999 ◽  
Vol 75 (2) ◽  
pp. 277-279 ◽  
Author(s):  
M. A. Lourenço ◽  
Wai Lek Ng ◽  
K. P. Homewood ◽  
K. Durose
Keyword(s):  
Activation Energy ◽  
Cross Section ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Variable Activation Energy

Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

1983 ◽  
Vol 26 (1) ◽  
pp. 1-6 ◽  
Author(s):  
J.R. Morante ◽  
J.E. Carceller ◽  
P. Cartujo ◽  
J. Barbolla
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Thermal Emission ◽  
Emission Rates ◽  
Capture Cross

Charged Dangling Bonds and Crystallization in Group IV Semiconductors

1982 ◽  
Vol 13 ◽  
Author(s):  
P.J. Germain ◽  
M.A. Paesler ◽  
D.E. Sayers ◽  
K. Zellama
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Ionizing Radiation ◽  
Cross Section ◽  
Capture Cross Section ◽  
Group Iv ◽  
Capture Cross ◽  
Dangling Bonds ◽  
Group Iv Semiconductors ◽  
Increasing Function

ABSTRACTCrystallization of amorphous Ge (or Si) has been studied as a function of temperature and the flux of ionizing radiation (or doping). The crystallization growth rate Vg takes on the form Vg = vo exp(−E/kT) where vo is an increasing function of flux (or doping). We propose the following to explain these data: A concentration of mobile dangling bonds (DBs) exists in the bulk and near the amorphous-crystalline (a-c) interface. Ionization and doping induce transitions from the uncharged state Do to the charged states D+ and D−. The process controlling crystallization resulting in the above activation energy is discussed. Only certain sites on the a-side of the a-c interface are available for crystallization, and these sites are those which have captured DBs. The charged D+; and D− states have a larger capture cross section than the uncharged Do state. Increased concentrations of charged DBs results in an enhancement of the prefactor in the above equation.

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